CY8C5246AXI-038 Cypress Semiconductor Corp, CY8C5246AXI-038 Datasheet - Page 65
CY8C5246AXI-038
Manufacturer Part Number
CY8C5246AXI-038
Description
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY8C5246AXI-038.pdf
(85 pages)
Specifications of CY8C5246AXI-038
Lead Free Status / RoHS Status
Compliant
- Current page: 65 of 85
- Download datasheet (3Mb)
11.7 Memory
Specifications are valid for –40 °C T
except where noted.
11.7.1 Flash
Table 11-40. Flash DC Specifications
Table 11-41. Flash AC Specifications
11.7.2 EEPROM
Table 11-42. EEPROM DC Specifications
Table 11-43. EEPROM AC Specifications
11.7.3 Nonvolatile Latches (NVL)
Table 11-44. NVL DC Specifications
Document Number: 001-55034 Rev. *G
T
T
T
T
Parameter
Parameter
Parameter
Parameter
Parameter
WRITE
ERASE
BULK
WRITE
Row write time (erase + program)
Row erase time
Row program time
Bulk erase time (256 KB)
Sector erase time (16 KB)
Total device program time
(including JTAG, and so on)
Flash endurance
Flash data retention time
Erase and program voltage
Single byte erase/write cycle time
EEPROM endurance
EEPROM data retention time
Erase and program voltage
Erase and program voltage
Description
Description
Description
Description
Description
A
85 °C and T
PRELIMINARY
V
J
Retention period measured from
last erase cycle
Retention period measured from
last erase cycle (up to 100 K cycles)
V
DDD
100 °C, except where noted. Specifications are valid for 1.71 V to 5.5 V,
DDD
pin
pin
Conditions
Conditions
Conditions
Conditions
Conditions
PSoC
®
5: CY8C52 Family Datasheet
1.71
100k
Min
1.71
1.71
Min
Min
Min
Min
1M
20
20
–
–
–
–
–
–
–
Typ
Typ
Typ
Typ
Typ
–
–
–
–
–
–
–
–
–
–
–
–
2
–
Max
Max
Max
Max
Max
5.5
5.5
5.5
15
10
80
15
15
5
5
–
–
–
–
Page 65 of 85
program/
program/
seconds
Units
cycles
cycles
Units
erase
years
Units
Units
erase
years
Units
ms
ms
ms
ms
ms
ms
V
V
V
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