MC9S08QD2CSC Freescale, MC9S08QD2CSC Datasheet - Page 175
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MC9S08QD2CSC
Manufacturer Part Number
MC9S08QD2CSC
Description
Manufacturer
Freescale
Datasheet
1.MC9S08QD2CSC.pdf
(198 pages)
Specifications of MC9S08QD2CSC
Cpu Family
HCS08
Device Core Size
8b
Frequency (max)
8MHz
Total Internal Ram Size
128Byte
# I/os (max)
4
Number Of Timers - General Purpose
3
Operating Supply Voltage (typ)
3.3/5V
Operating Supply Voltage (max)
5.5V
Operating Supply Voltage (min)
2.7V
On-chip Adc
4-chx10-bit
Instruction Set Architecture
CISC
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Program Memory Type
Flash
Program Memory Size
2KB
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MC9S08QD2CSC
Manufacturer:
FREESCALE
Quantity:
20 000
Company:
Part Number:
MC9S08QD2CSCR
Manufacturer:
FREESCALE
Quantity:
310
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A.4
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early
CMOS circuits, normal handling precautions must be used to avoid exposure to static discharge.
Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels
of static without suffering any permanent damage.
All ESD testing is in conformity with AEC-Q100 Stress Test Qualification for Automotive Grade
Integrated Circuits. During the device qualification ESD stresses were performed for the human body
model (HBM), the machine model (MM) and the charge device model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
A.5
This section includes information about power supply requirements and I/O pin characteristics.
Freescale Semiconductor
ESD Protection and Latch-Up Immunity
DC Characteristics
1
Latch-up
Machine
Parameter is achieved by design characterization on a small sample size from typical devices
under typical conditions unless otherwise noted.
Model
Human
Body
No.
1
2
3
4
Series resistance
Storage capacitance
Number of pulses per pin
Series resistance
Storage capacitance
Number of pulses per pin
Minimum input voltage limit
Maximum input voltage limit
Human body model (HBM)
Machine model (MM)
Charge device model (CDM)
Latch-up current at T
Table A-4. ESD and Latch-Up Protection Characteristics
Table A-3. ESD and Latch-up Test Conditions
Description
MC9S08QD4 Series MCU Data Sheet, Rev. 6
Rating
1
A
= 85°C
Symbol
Symbol
V
V
V
I
R1
R1
HBM
CDM
LAT
—
—
C
C
MM
± 2000
± 200
± 500
± 100
Min
Value
1500
– 2.5
100
200
7.5
3
0
3
Appendix A Electrical Characteristics
Max
—
—
—
—
Unit
Unit
mA
pF
pF
Ω
Ω
V
V
V
V
V
175
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