FS50R12KE3 Infineon Technologies, FS50R12KE3 Datasheet - Page 3

• Manufacturer Part Number: FS50R12KE3
• Description: IGBT Modules 1200V 50A 3-PHASE
• Manufacturer: Infineon Technologies

Specifications of FS50R12KE3

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 75A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 1.7 V
• Continuous Collector Current At 25 C: 75 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 270 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: ECONO 2
• Ic (max): 50.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: EconoPACK™ 2
• Lead Free Status / RoHS Status: Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant

IGBT-Module
IGBT-Modules
NTC-Widerstand / NTC-thermistor
Nennwiderstand
rated resistance
Abweichung von R
deviation of R
Verlustleistung
power dissipation
B-Wert
B-value
Innerer Wärmewiderstand; DC
thermal resistance, junction to case; DC
Übergangs Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemp.
maximum junction temperature
Betriebstemperatur
operation temperature
Lagertemperatur
storage temperature
Gehäuse, siehe Anlage
case, see appendix
Innere Isolation
internal insulation
Kriechstrecke
creepage distance
Luftstrecke
clearence distance
CTI
comperative tracking index
Anzugsdrehmoment, mech. Befestigung
mounting torque
Gewicht
weight
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften
zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is valid with
the belonging technical notes.
Charakteristische Werte / characteristic values
Thermische Eigenschaften / thermal properties
Mechanische Eigenschaften / mechanical properties
Technische Information / technical information
100
100
T
T
T
R
Transistor Wechelr. / transistor inverter
Diode Wechselrichter / diode inverter
pro Modul / per module
λ
Schraube / screw M5
Paste
c
c
c
2
= 25°C
= 100°C, R
= 25°C
= R
= 1W/m*K / λ
1
exp[B(1/T
FS50R12KE3
3 (8)
100
= 493Ω
2
- 1/T
grease
1
)]
= 1W/m*K
T
∆R/R
B
R
R
T
R
T
P
vj max
25/50
thCK
vj op
M
G
thJC
stg
25
25
min.
-40
-40
-5
3
-
-
-
-
-
-
-
DB_FS50R12KE3_ 3.0.xls
Al
3375
0,02
10,0
typ.
225
180
7,5
2
5
-
-
-
-
-
-
-
-
O
3
2002-09-03
max.
0,45
0,75
150
125
125
20
5
6
-
-
-
mW
K/W
K/W
K/W
mm
mm
Nm
kΩ
°C
°C
°C
%
K
g