FS50R12KE3 Infineon Technologies, FS50R12KE3 Datasheet - Page 4

• Manufacturer Part Number: FS50R12KE3
• Description: IGBT Modules 1200V 50A 3-PHASE
• Manufacturer: Infineon Technologies

Specifications of FS50R12KE3

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 75A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 1.7 V
• Continuous Collector Current At 25 C: 75 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 270 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: ECONO 2
• Ic (max): 50.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: EconoPACK™ 2
• Lead Free Status / RoHS Status: Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant

IGBT-Module
IGBT-Modules
Ausgangskennlinie (typisch)
output characteristic (typical)
Ausgangskennlinienfeld (typisch)
output characteristic (typical)
Technische Information / technical information
100
100
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
0,0
0,0
0,5
0,5
1,0
VGE=19V
VGE=17V
VGE=15V
VGE=13V
VGE=11V
VGE=9V
1,0
Tvj = 25°C
Tvj = 125°C
1,5
FS50R12KE3
4 (8)
1,5
2,0
V
V
CE
CE
2,5
2,0
[V]
[V]
3,0
2,5
I
V
I
T
3,5
C
C
vj
GE
= f(V
= f(V
= 125°C
= 15V
3,0
CE
CE
4,0
)
)
DB_FS50R12KE3_ 3.0.xls
3,5
4,5
2002-09-03
5,0
4,0