FS50R12KE3 Infineon Technologies, FS50R12KE3 Datasheet - Page 6

• Manufacturer Part Number: FS50R12KE3
• Description: IGBT Modules 1200V 50A 3-PHASE
• Manufacturer: Infineon Technologies

Specifications of FS50R12KE3

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 75A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 1.7 V
• Continuous Collector Current At 25 C: 75 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 270 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: ECONO 2
• Ic (max): 50.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: EconoPACK™ 2
• Lead Free Status / RoHS Status: Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant

IGBT-Module
IGBT-Modules
Schaltverluste (typisch)
Switching losses (typical)
Schaltverluste (typisch)
Switching losses (typical)
Technische Information / technical information
14
12
10
14
12
10
8
6
4
2
0
8
6
4
2
0
0
0
10
10
20
Eon
Eoff
Erec
Eon
Eoff
Erec
20
30
FS50R12KE3
6 (8)
30
40
V
V
E
E
GE
GE
on
on
=±15V, R
=±15V, I
= f(I
= f(R
R
I
C
G
50
40
[A]
[Ω]
C
), E
G
), E
C
G
=50A, V
60
=18Ω, V
off
off
50
= f(I
= f(R
CE
C
70
CE
), E
=600V, T
G
=600V, T
), E
60
rec
80
= f(I
rec
DB_FS50R12KE3_ 3.0.xls
= f(R
vj
vj
=125°C
C
=125°C
)
70
90
G
)
2002-09-03
100
80