CAT5411WI-50-T1 ON Semiconductor, CAT5411WI-50-T1 Datasheet - Page 6

• Manufacturer Part Number: CAT5411WI-50-T1
• Description: IC POT DPP 50K 64TAP SPI 24SOIC
• Manufacturer: ON Semiconductor

Specifications of CAT5411WI-50-T1

• Taps: 64
• Resistance (ohms): 50K
• Number Of Circuits: 2
• Temperature Coefficient: 300 ppm/°C Typical
• Memory Type: Non-Volatile
• Interface: SPI Serial
• Voltage - Supply: 2.5 V ~ 6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 24-SOIC (7.5mm Width)
• Resistance In Ohms: 50K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

9. This parameter is tested initially and after a design or process change that affects the parameter.
10. t
Table 6. D.C. OPERATING CHARACTERISTICS
Table 7. PIN CAPACITANCE
(Applicable over recommended operating range from T
Table 8. POWER UP TIMING
Symbol
Symbol
PUR
V
C
I
V
I
I
V
C
I
CC
SB
LO
OL1
t
OUT
t
LI
IH
PUW
IL
PUR
IN
and t
Symbol
(Note 10)
(Note 10)
PUW
Power Supply Current
Standby Current (V
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage (V
Output Capacitance (SO)
Input Capacitance (CS, SCK, SI, WP, HOLD)
are the delays required from the time V
Parameter
Power−up to Read Operation
Power−up to Write Operation
Test Conditions
CC
(Note 9)
(Note 9) (Over recommended operating conditions unless otherwise stated.)
= 5 V)
CC
= 3 V)
Parameter
A
f
Open Inputs = GND
V
V
V
I
SCK
OL
CC
= 25°C, f = 1.0 MHz, V
(Over recommended operating conditions unless otherwise stated.)
IN
IN
OUT
http://onsemi.com
= 3 mA
= GND or V
= GND to V
is stable until the specified operation can be initiated.
= 2 MHz, SO
= GND to V
Test Conditions
6
CC
CC
CC
; SO Open
Min
CC
= +5.0 V (unless otherwise noted).)
Typ
Min
Max
8
6
V
CC
Min
−1
x 0.7
Units
Typ
pF
pF
V
V
CC
CC
Max
0.4
Max
10
10
1
1
x 0.3
+ 1.0
Conditions
1
1
V
V
OUT
IN
= 0 V
= 0 V
Units
Units
mA
ms
ms
mA
mA
mA
V
V
V