MT48H4M16LFB4-75 Micron Technology Inc, MT48H4M16LFB4-75 Datasheet - Page 18

• Manufacturer Part Number: MT48H4M16LFB4-75
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48H4M16LFB4-75

• Organization: 4Mx16
• Density: 64Mb
• Address Bus: 14b
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 50mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

Deep Power-Down
PDF: 09005aef8237ed98, Source: 09005aef8237ed68
64mb_x16_Mobile SDRAM_Y24L_2.fm - Rev. B 10/06 EN
The procedure for exiting self refresh requires a sequence of commands. First, CLK must
be stable (stable clock is defined as a signal cycling within timing constraints specified
for the clock pin) prior to CKE going back HIGH. Once CKE is HIGH, the SDRAM must
have NOP commands issued (a minimum of two clocks) for
required for the completion of any internal refresh in progress.
Upon exiting the self refresh mode, AUTO REFRESH commands should be issued at
once and then every 15.625µs or less, as both SELF REFRESH and AUTO REFRESH
utilize the row refresh counter.
The operating mode deep power-down achieves maximum power reduction by elimi-
nating the power of the whole memory array of the device. Array data will not be
retained once the device enters deep power-down mode.
This mode is entered by having all banks idle then CS# and WE# held LOW with RAS#
and CAS# held HIGH at the rising edge of the clock, while CKE is LOW. This mode is
exited by asserting CKE HIGH.
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Micron Technology, Inc., reserves the right to change products or specifications without notice.
64Mb: 4 Meg x 16 Mobile SDRAM
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XSR because time is
©2006 Micron Technology, Inc. All rights reserved.