MT48H4M16LFB4-75 Micron Technology Inc, MT48H4M16LFB4-75 Datasheet - Page 60
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MT48H4M16LFB4-75
Manufacturer Part Number
MT48H4M16LFB4-75
Description
Manufacturer
Micron Technology Inc
Type
SDRAMr
Datasheet
1.MT48H4M16LFB4-75.pdf
(64 pages)
Specifications of MT48H4M16LFB4-75
Organization
4Mx16
Density
64Mb
Address Bus
14b
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
50mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT48H4M16LFB4-75 IT:H
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Company:
Part Number:
MT48H4M16LFB4-75 IT:H TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Company:
Part Number:
MT48H4M16LFB4-75:H
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT48H4M16LFB4-75:H
Manufacturer:
MICRON
Quantity:
20 000
Company:
Part Number:
MT48H4M16LFB4-75:H TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Company:
Part Number:
MT48H4M16LFB4-75IT:H
Manufacturer:
ISSI
Quantity:
171
Figure 45:
PDF: 09005aef8237ed98, Source: 09005aef8237ed68
64mb_x16_Mobile SDRAM_Y24L_2.fm - Rev. B 10/06 EN
COMMAND
A0-A9, A11
BA0, BA1
DQM
CKE
A10
CLK
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
T0
ROW
ROW
BANK
Single WRITE – Without Auto Precharge
t CKH
t CMH
t AH
t AH
t AH
Notes:
t RCD
t RAS
t RC
t CK
T1
NOP
1. For this example, the burst length = 1, and the WRITE burst is followed by a “manual” PRE-
2. 15ns is required between <D
3. A9 and A11 = “Don’t Care.”
4. PRECHARGE command not allowed else
DISABLE AUTO PRECHARGE
CHARGE.
t CMS
t CL
t DS
COLUMN m 3
WRITE
T2
BANK
D
IN
t CMH
t CH
t DH
m
t WR
2
NOP 4
T3
60
IN
NOP 4
T4
m> and the PRECHARGE command, regardless of frequency.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
PRECHARGE
SINGLE BANK
t
ALL BANKS
RAS would be violated.
T5
BANK
64Mb: 4 Meg x 16 Mobile SDRAM
t RP
T6
NOP
©2006 Micron Technology, Inc. All rights reserved.
ACTIVE
BANK
ROW
T7
NOP
T8
DON’T CARE