MT46H32M16LFCK-10 Micron Technology Inc, MT46H32M16LFCK-10 Datasheet - Page 34
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MT46H32M16LFCK-10
Manufacturer Part Number
MT46H32M16LFCK-10
Description
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet
1.MT46H32M16LFCK-10.pdf
(81 pages)
Specifications of MT46H32M16LFCK-10
Organization
32Mx16
Density
512Mb
Address Bus
15b
Access Time (max)
7ns
Maximum Clock Rate
104MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
90mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT46H32M16LFCK-10 L
Manufacturer:
MICRON
Quantity:
4 000
Figure 18:
PDF: 09005aef818ff7c5/Source: 09005aef81a6c5f3
MT46H32M16LF_2..fm - Rev. F 09/05 EN
READ-to-WRITE
Notes: 1. D
COMMAND
COMMAND
2. D
3. BL = 4 in the cases shown (applies for bursts of 8, 16, or continuous page as well; if BL = 2,
4. Shown with nominal
5. 5. BST = BURST TERMINATE command; page remains open.
6. 6. CKE = HIGH.
ADDRESS
ADDRESS
the BST command shown can be a NOP).
DQS
DQS
OUT
IN
CK#
CK#
DM
DM
DQ
DQ
CK
CK
b = data-in from column b.
n = data-out from column n.
READ
Bank,
READ
Col n
Bank,
Col n
T0
T0
CL = 2
t
AC,
BST
BST
T1
T1
t
5
5
CL = 3
DQSCK, and
34
T1n
D
OUT
n
NOP
T2
NOP
T2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512Mb: x16, x32 Mobile DDR SDRAM
t
DQSQ.
D
n + 1
T2n
T2n
OUT
D
OUT
n
WRITE
NOP
Bank,
Col b
T3
T3
DON’T CARE
D
n + 1
(NOM)
OUT
t
T3n
T3n
DQSS
WRITE
Bank,
D
T4
Col b
T4
NOP
©2005 Micron Technology, Inc. All rights reserved.
b
IN
(NOM)
TRANSITIONING DATA
T4n
T4n
t
b+1
D
DQSS
IN
D
b+2
T5
Operations
T5
D
NOP
NOP
b
IN
IN
b + 1
T5n
T5n
b+3
D
D
Advance
IN
IN