MT46H32M16LFCK-10 Micron Technology Inc, MT46H32M16LFCK-10 Datasheet - Page 34

• Manufacturer Part Number: MT46H32M16LFCK-10
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H32M16LFCK-10

• Organization: 32Mx16
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 7ns
• Maximum Clock Rate: 104MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 90mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

Figure 18:
PDF: 09005aef818ff7c5/Source: 09005aef81a6c5f3
MT46H32M16LF_2..fm - Rev. F 09/05 EN
READ-to-WRITE
Notes: 1. D
COMMAND
COMMAND
2. D
3. BL = 4 in the cases shown (applies for bursts of 8, 16, or continuous page as well; if BL = 2,
4. Shown with nominal
5. 5. BST = BURST TERMINATE command; page remains open.
6. 6. CKE = HIGH.
ADDRESS
ADDRESS
the BST command shown can be a NOP).
DQS
DQS
OUT
IN
CK#
CK#
DM
DM
DQ
DQ
CK
CK
b = data-in from column b.
n = data-out from column n.
READ
Bank,
READ
Col n
Bank,
Col n
T0
T0
CL = 2
t
AC,
BST
BST
T1
T1
t
5
5
CL = 3
DQSCK, and
34
T1n
D
OUT
n
NOP
T2
NOP
T2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512Mb: x16, x32 Mobile DDR SDRAM
t
DQSQ.
D
n + 1
T2n
T2n
OUT
D
OUT
n
WRITE
NOP
Bank,
Col b
T3
T3
DON’T CARE
D
n + 1
(NOM)
OUT
t
T3n
T3n
DQSS
WRITE
Bank,
D
T4
Col b
T4
NOP
©2005 Micron Technology, Inc. All rights reserved.
b
IN
(NOM)
TRANSITIONING DATA
T4n
T4n
t
b+1
D
DQSS
IN
D
b+2
T5
Operations
T5
D
NOP
NOP
b
IN
IN
b + 1
T5n
T5n
b+3
D
D
Advance
IN
IN