MT46H32M16LFCK-10 Micron Technology Inc, MT46H32M16LFCK-10 Datasheet - Page 44

• Manufacturer Part Number: MT46H32M16LFCK-10
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H32M16LFCK-10

• Organization: 32Mx16
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 7ns
• Maximum Clock Rate: 104MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 90mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

Figure 29:
PDF: 09005aef818ff7c5/Source: 09005aef81a6c5f3
MT46H32M16LF_2..fm - Rev. F 09/05 EN
COMMAND
ADDRESS
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
DQS
DQS
DQS
CK#
DM
DM
DM
DQ
DQ
DQ
CK
WRITE-to-PRECHARGE – Interrupting
Bank a,
WRITE
Col b
T0
Notes: 1. D
t
t
t
DQSS
DQSS
DQSS
2. An uninterrupted burst of 4 is shown.
3.
4. The READ and WRITE commands are to same device. However, the READ and WRITE com-
5. A10 is LOW with the WRITE command (auto precharge is disabled).
6. PRE = PRECHARGE command.
D
t
mands may be to different devices, in which case
mand could be applied earlier.
b
WR is referenced from the first positive CK edge after the last data-in pair.
IN
IN
NOP
T1
D
b = data-in for column b.
b
IN
b + 1
D
D
b
IN
IN
T1n
b + 1
D
IN
b + 1
D
IN
NOP
T2
T2n
44
t
WR
T3
NOP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T3n
512Mb: x16, x32 Mobile DDR SDRAM
(a or all)
PRE
Bank
T4
DON’T CARE
6
t
WTR is not required and the READ com-
T4n
T5
NOP
©2005 Micron Technology, Inc. All rights reserved.
TRANSITIONING DATA
T6
NOP
Operations
Advance