MT46H32M16LFCK-10 Micron Technology Inc, MT46H32M16LFCK-10 Datasheet - Page 44
![no-image](/images/manufacturer_photos/0/4/441/micron_technology_inc_sml.jpg)
MT46H32M16LFCK-10
Manufacturer Part Number
MT46H32M16LFCK-10
Description
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet
1.MT46H32M16LFCK-10.pdf
(81 pages)
Specifications of MT46H32M16LFCK-10
Organization
32Mx16
Density
512Mb
Address Bus
15b
Access Time (max)
7ns
Maximum Clock Rate
104MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
90mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT46H32M16LFCK-10 L
Manufacturer:
MICRON
Quantity:
4 000
Figure 29:
PDF: 09005aef818ff7c5/Source: 09005aef81a6c5f3
MT46H32M16LF_2..fm - Rev. F 09/05 EN
COMMAND
ADDRESS
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
DQS
DQS
DQS
CK#
DM
DM
DM
DQ
DQ
DQ
CK
WRITE-to-PRECHARGE – Interrupting
Bank a,
WRITE
Col b
T0
Notes: 1. D
t
t
t
DQSS
DQSS
DQSS
2. An uninterrupted burst of 4 is shown.
3.
4. The READ and WRITE commands are to same device. However, the READ and WRITE com-
5. A10 is LOW with the WRITE command (auto precharge is disabled).
6. PRE = PRECHARGE command.
D
t
mands may be to different devices, in which case
mand could be applied earlier.
b
WR is referenced from the first positive CK edge after the last data-in pair.
IN
IN
NOP
T1
D
b = data-in for column b.
b
IN
b + 1
D
D
b
IN
IN
T1n
b + 1
D
IN
b + 1
D
IN
NOP
T2
T2n
44
t
WR
T3
NOP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T3n
512Mb: x16, x32 Mobile DDR SDRAM
(a or all)
PRE
Bank
T4
DON’T CARE
6
t
WTR is not required and the READ com-
T4n
T5
NOP
©2005 Micron Technology, Inc. All rights reserved.
TRANSITIONING DATA
T6
NOP
Operations
Advance