2SK2879-01 Fuji Semiconductor, 2SK2879-01 Datasheet
2SK2879-01
Manufacturer Part Number
2SK2879-01
Description
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.33Ohm; ID +/-20A; TO-3P; PD 150W; VGS +/-30V
Manufacturer
Fuji Semiconductor
Datasheet
1.2SK2879-01.pdf
(1 pages)
Specifications of 2SK2879-01
Application
For switching regulators, UPS (Uninterruptible Power Supply), DC to DC Converters
Channel Type
N-Channel
Current, Drain
±20 A
Operating And Storage Temperature
150 °C
Package Type
TO-3P
Polarization
N-Channel
Power Dissipation
150 W
Resistance, Drain To Source On
0.33 Ohm
Resistance, Thermal, Junction To Case
0.83 °C⁄W (Max.)
Temperature, Operating, Maximum
+150 °C
Thermal Resistance, Junction To Ambient
35 °C⁄W
Time, Turn-off Delay
160 ns
Time, Turn-on Delay
20 ns
Transconductance, Forward
15 S
Voltage, Breakdown, Drain To Source
500 V
Voltage, Diode Forward
1.1 V (Typ.)
Voltage, Drain To Source
500 V
Voltage, Forward, Diode
1.1 V
Voltage, Gate To Source
±30 V
Lead Free Status / Rohs Status
RoHS Compliant part
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK2879-01
Manufacturer:
TOSHIBAHIBA
Quantity:
12 500
2SK2879-01
N-CHANNEL SILICON POWER MOSFET
FAP-2S Series
Item
Thermalcharacteristics
Maximum ratings and characteristic
(Tc=25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
Turn-off time t
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Max. power dissipation
Operating and storage
temperature range
Item
Electrical characteristics (T
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
off
on
c
=25°C unless otherwise specified)
Symbol
V
I
I
I
E
P
T
T
V
D
D(puls]
AR *2
D
ch
stg
AS *1
DS
GS
R
R
Symbol
Symbol
V
V
I
R
g
C
C
C
td
t
td
t
I
V
t
Q
I
th(ch-c)
th(ch-a)
GSS
AV
f
DSS
r
rr
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
(on)
(off)
rr
*1 L=3.49mH, Vcc=50V
Absolute maximum ratings
Ratings
-55 to +150
Test Conditions
V
V
R
Test Conditions
I
I
V
V
V
V
f=1MHz
L=3.49 mH T
I
I
-di/dt=100A/µs
V
I
I
channel to ambient
D
D
F
F
D
D
channel to case
CC
GS
GS
+150
DS
GS
GS
DS
GS
=2xI
=I
=1mA
=1mA
=10A
=10A
500
±20
±80
±30
761
150
DR
=0V
=300V I
=10V
=10
20
=500V
=±30V
=25V
=0V
DR
V
GS
V
V
V
GS
DS
GS
=0V
V
V
V
D
*2 Tch=150°C
ch
DS
DS
GS
=20A
=10V
=25V
=0V T
=25°C
=0V
=V
=0V
T
ch
GS
<
Unit
=25°C
°C
°C
mJ
W
ch
V
A
A
V
A
=25°C
T
T
ch
ch
=25°C
=125°C
TO-3P
Outline Drawings
FUJI POWER MOSFET
Equivalent circuit schematic
Min.
Min.
Gate(G)
500
20
2.5
7.5
2200
Typ.
Typ.
330
140
130
160
105
650
10
10
15.0
20
10.0
3.0
0.2
0.33
1.1
Source(S)
Drain(D)
3300
Max.
Max.
35.0
500
100
500
210
200
240
160
0.83
30
3.5
1.0
0.38
1.65
Units
Units
°C/W
°C/W
ns
V
V
µA
mA
nA
S
pF
A
V
ns
µC
1
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