PIC18F26K80-I/SO Microchip Technology Inc., PIC18F26K80-I/SO Datasheet - Page 566
PIC18F26K80-I/SO
Manufacturer Part Number
PIC18F26K80-I/SO
Description
IC, MCU, nanoWatt; 8-bit w/ECAN; Flash, 64KB; 16MIPS; 8-ch, 12-BIT A/D; SOIC-28
Manufacturer
Microchip Technology Inc.
Datasheet
1.PIC18F46K80-IPT.pdf
(628 pages)
Specifications of PIC18F26K80-I/SO
A/d Inputs
8-Channel, 12-Bit
Comparators
2
Cpu Speed
16 MIPS
Eeprom Memory
256 Bytes
Input Output
24
Interface
I2C/SPI/UART/USART
Memory Type
Flash
Number Of Bits
8
Package Type
28-pin SOIC
Programmable Memory
64K Bytes
Ram Size
3.6K Bytes
Speed
64 MHz
Temperature Range
–40 to 125 °C
Timers
2-8-bit, 3-16-bit
Voltage, Range
1.8-5.5 V
Lead Free Status / Rohs Status
RoHS Compliant part
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PIC18F26K80-I/SO
Manufacturer:
Microchip Technology
Quantity:
135
Part Number:
PIC18F26K80-I/SO
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
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PIC18F66K80 FAMILY
TABLE 31-1:
DS39977C-page 566
DC CHARACTERISTICS
D110
D113
D120
D121
D122
D123
D124
D130
D131
D132B V
D133A T
D134
D135
D140
Note 1:
Param
No.
2:
3:
4:
† Data in “Typ” column is at 3.3V, 25°C unless otherwise stated. These parameters are for design guidance
V
I
E
V
T
T
T
E
V
T
I
T
DDP
DDP
Sym
DEW
RETD
REF
IW
RETD
WE
PP
D
DRW
P
PR
PEW
only and are not tested.
These specifications are for programming the on-chip program memory through the use of table write
instructions.
Refer to
endurance.
Required only if Single-Supply Programming is disabled.
The MPLAB ICD2 does not support variable V
placed between the ICD2 and target system when programming or debugging with the ICD2.
Internal Program Memory
Programming Specifications
Voltage on MCLR/V
Supply Current during
Programming
Data EEPROM Memory
Byte Endurance
V
Erase/Write Cycle Time
Characteristic Retention
Number of Total Erase/Write
Cycles before Refresh
Program Flash Memory
Cell Endurance
V
Voltage for Self-Timed Erase or
Write Operations
V
Self-Timed Write Cycle Time
Characteristic Retention
Supply Current during
Programming
Writes per Erase Cycle
MEMORY PROGRAMMING REQUIREMENTS
DD
DD
DD
Section 8.8 “Using the Data EEPROM”
for Read/Write
for Read
Characteristic
PP
/RE5 pin
(2)
(1)
Preliminary
Standard Operating Conditions
Operating temperature -40°C T
V
DD
100K
Min
1.8
1.8
1M
1.8
1.8
1.8
1K
20
20
—
—
—
—
—
PP
+ 1.5
output. Circuitry to limit the ICD2 V
for a more detailed discussion on data EEPROM
1000K
Typ†
10M
10K
—
—
—
—
—
—
—
—
—
—
—
4
2
Max
-40°C T
5.5
3.6
5.5
3.6
5.5
10
10
—
—
10
—
—
—
—
—
1
Units
Year Provided no other
Year Provided no other
E/W -40C to +125C
E/W -40°C to +125°C
E/W -40 C to +125 C
mA
mA
ms
ms
A
A
V
V
V
V
V
V
+125°C for Extended
+85°C for Industrial
2011 Microchip Technology Inc.
(Note 3, Note 4)
(Note 2)
Using EECON to read/write
PIC18FXXKXX devices
Using EECON to read/write
PIC18LFXXKXX devices
specifications are violated
PIC18FXXKXX devices
PIC18LFXXKXX devices
PIC18FXXKXX devices
specifications are violated
For each physical address
PP
voltage must be
Conditions
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