BUK9Y22-30B NXP Semiconductors, BUK9Y22-30B Datasheet - Page 2

• Manufacturer Part Number: BUK9Y22-30B
• Description: MOSFET, N CH, 30V, 37.7A, LFPAK
• Manufacturer: NXP Semiconductors

Specifications of BUK9Y22-30B

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 37.7A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.0135ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.5V
• Rohs Compliant: Yes

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BUK9Y22-30B
Product data sheet
Pin
1
2
3
4
mb
Type number
BUK9Y22-30B
Symbol Description
S
S
S
G
D
Pinning information
Ordering information
source
source
source
gate
mounting base; connected to
drain
Table 1.
Package
Name
LFPAK
Symbol
Avalanche ruggedness
E
Dynamic characteristics
Q
DS(AL)S
GD
Quick reference data
Parameter
non-repetitive
drain-source
avalanche energy
gate-drain charge V
Description
plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 7 April 2010
Simplified outline
SOT669 (LFPAK)
Conditions
I
R
T
V
D
…continued
j(init)
GS
DS
GS
= 37.7 A; V
1 2 3 4
= 5 V; I
= 24 V; see
= 50 Ω; V
= 25 °C; unclamped
mb
D
= 20 A;
sup
GS
Figure 14
≤ 30 V;
= 5 V;
N-channel TrenchMOS logic level FET
Graphic symbol
BUK9Y22-30B
mbl798
G
Min
-
-
S1 S2 S3
D
© NXP B.V. 2010. All rights reserved.
Typ
-
4.5
Version
Max Unit
47
-
2 of 14
mJ
nC