BUK9Y22-30B NXP Semiconductors, BUK9Y22-30B Datasheet - Page 9

• Manufacturer Part Number: BUK9Y22-30B
• Description: MOSFET, N CH, 30V, 37.7A, LFPAK
• Manufacturer: NXP Semiconductors

Specifications of BUK9Y22-30B

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 37.7A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.0135ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.5V
• Rohs Compliant: Yes

NXP Semiconductors
BUK9Y22-30B
Product data sheet
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
V
(V)
GS
5
4
3
2
1
0
charge; typical values.
0
V
DS
4
= 14 V
(A)
8
I
S
100
80
60
40
20
V
0
0.2
DS
All information provided in this document is subject to legal disclaimers.
Q
003aac960
= 24 V
G
(nC)
12
Rev. 04 — 7 April 2010
T
j
= 175 °C
0.6
Fig 15. Input, output and reverse transfer capacitances
(pF)
1
10
10
10
C
10
4
3
2
T
10
j
as a function of drain-source voltage; typical
values.
= 25 °C
V
-1
SD
003aac963
(V)
N-channel TrenchMOS logic level FET
1.4
1
BUK9Y22-30B
10
© NXP B.V. 2010. All rights reserved.
V
DS
003aac967
C
C
C
(V)
iss
oss
rss
10
2
9 of 14