BUK9Y22-30B NXP Semiconductors, BUK9Y22-30B Datasheet - Page 8

• Manufacturer Part Number: BUK9Y22-30B
• Description: MOSFET, N CH, 30V, 37.7A, LFPAK
• Manufacturer: NXP Semiconductors

Specifications of BUK9Y22-30B

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 37.7A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.0135ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.5V
• Rohs Compliant: Yes

NXP Semiconductors
BUK9Y22-30B
Product data sheet
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
2.5
2.0
1.5
1.0
0.5
0.0
1.5
0.5
2
1
0
−60
−60
junction temperature
factor as a function of junction temperature
0
0
60
60
max
min
typ
120
120
All information provided in this document is subject to legal disclaimers.
003aab986
T
003aab851
T
j
j
(°C)
(°C)
180
180
Rev. 04 — 7 April 2010
Fig 11. Sub-threshold drain current as a function of
Fig 13. Drain-source on-state resistance as a function
R
(mΩ)
(A)
DSON
I
10
10
10
10
10
10
D
−1
−2
−3
−4
−5
−6
33
27
21
15
9
gate-source voltage
of gate-source voltage; typical values.
0
0
N-channel TrenchMOS logic level FET
4
min
1
BUK9Y22-30B
8
typ
2
max
12
V
© NXP B.V. 2010. All rights reserved.
GS
003aac964
V
003aab987
GS
(V)
(V)
16
3
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