BUK9Y22-30B NXP Semiconductors, BUK9Y22-30B Datasheet - Page 6

• Manufacturer Part Number: BUK9Y22-30B
• Description: MOSFET, N CH, 30V, 37.7A, LFPAK
• Manufacturer: NXP Semiconductors

Specifications of BUK9Y22-30B

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 37.7A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.0135ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.5V
• Rohs Compliant: Yes

NXP Semiconductors
6. Characteristics
Table 6.
BUK9Y22-30B
Product data sheet
Symbol
Static characteristics
V
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
(BR)DSS
GS(th)
GSth
SD
DSon
iss
oss
rss
G(tot)
GS
GD
r
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
see
V
V
see
V
I
see
V
T
V
R
I
see
I
V
All information provided in this document is subject to legal disclaimers.
D
D
D
D
D
D
S
S
j
DS
DS
DS
DS
GS
GS
GS
GS
GS
DS
DS
G(ext)
= 25 °C; see
= 10 A; V
= 20 A; dI
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 20 A; V
Figure
Figure
Figure
Figure
Figure 12
Figure 14
Figure 16
= 30 V; V
= 30 V; V
= 0 V; V
= 0 V; V
= 25 V; R
= 30 V
= 5 V; I
= 4.5 V; I
= 5 V; I
= 10 V; I
= 0 V; V
= 10 Ω
Rev. 04 — 7 April 2010
10; see
10; see
10; see
12; see
D
D
DS
GS
S
DS
DS
DS
GS
GS
DS
D
/dt = -100 A/µs; V
= 20 A; T
D
= 20 A; T
GS
GS
L
= 20 A; T
= 24 V; V
= 0 V; T
= V
= V
= V
= 20 A; T
Figure 15
= 1.25 Ω; V
GS
GS
= 15 V; T
= -15 V; T
= 25 V; f = 1 MHz;
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
GS
GS
GS
Figure 11
Figure 11
Figure 11
Figure 13
; T
; T
; T
j
j
j
= 25 °C;
= 25 °C;
= 175 °C;
j
j
j
j
GS
j
j
j
j
= 25 °C;
= 175 °C;
= -55 °C;
= 25 °C
j
= 25 °C
= 25 °C
= 175 °C
= 25 °C
= 25 °C
j
j
GS
= 5 V;
= -55 °C
= 25 °C
= 5 V;
GS
= 0 V;
N-channel TrenchMOS logic level FET
BUK9Y22-30B
Min
27
30
1.1
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
1.5
-
-
0.02
-
2
2
17
-
-
13.5
10.5
3.3
4.5
705
188
102
8.7
18.5
42
23
0.85
30
33
© NXP B.V. 2010. All rights reserved.
226
-
Max
-
-
2
-
2.3
1
500
100
100
22
24
44
19
-
-
-
940
140
-
-
-
1.2
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
ns
nC
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