PMV22EN NXP Semiconductors, PMV22EN Datasheet - Page 3

• Manufacturer Part Number: PMV22EN
• Description: MOSFET, N CH, 30V, 5.2A, SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMV22EN

• Rohs Compliant: YES
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5.2A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.017ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.5V

NXP Semiconductors
PMV22EN
Product data sheet
Fig 1.
Fig 3.
P
(%)
(A)
I
10
10
der
D
120
10
80
40
10
–1
–2
1
0
2
10
−75
function of ambient temperature
voltage
Normalized total power dissipation as a
I
(1) t
(2) t
(3) t
(4) DC; T
(5) t
(6) DC; T
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
DM
–1
Limit R
= single pulse
p
p
p
p
= 100 µs
= 1 ms
= 10 ms
= 100 ms
−25
DSon
sp
amb
= 25 °C
= 25 °C; drain mounting pad 6 cm
= V
25
DS
/I
D
75
125
All information provided in this document is subject to legal disclaimers.
T
017aaa001
amb
1
(°C)
175
Rev. 1 — 30 March 2011
2
Fig 2.
(%)
I
der
120
80
40
0
−75
function of ambient temperature
Normalized continuous drain current as a
10
30 V, 5.2 A N-channel Trench MOSFET
−25
25
V
DS
75
(1)
(2)
(3)
(4)
(5)
(6)
(V)
PMV22EN
125
© NXP B.V. 2011. All rights reserved.
T
017aaa002
017aaa152
amb
(°C)
175
10
2
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