PMV22EN NXP Semiconductors, PMV22EN Datasheet - Page 4

• Manufacturer Part Number: PMV22EN
• Description: MOSFET, N CH, 30V, 5.2A, SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMV22EN

• Rohs Compliant: YES
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5.2A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.017ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.5V

NXP Semiconductors
5. Thermal characteristics
Table 5.
[1]
[2]
PMV22EN
Product data sheet
Symbol
R
R
Fig 4.
Fig 5.
th(j-a)
th(j-sp)
Z
Z
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
1
1
3
2
3
2
10
10
FR4 PCB, standard footprint
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for drain 6 cm
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
–3
–3
Thermal characteristics
duty cycle = 1
duty cycle = 1
0.25
0.02
0.25
0.02
0.5
0.1
0.5
0.1
0
0
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
0.75
0.33
0.05
0.75
0.33
0.05
0.01
0.01
0.2
0.2
10
10
–2
–2
Conditions
in free air
All information provided in this document is subject to legal disclaimers.
10
10
–1
–1
2
Rev. 1 — 30 March 2011
1
1
10
10
30 V, 5.2 A N-channel Trench MOSFET
[1]
[2]
2
.
Min
-
-
-
10
10
2
2
Typ
207
116
20
PMV22EN
t
t
p
p
© NXP B.V. 2011. All rights reserved.
(s)
(s)
017aaa153
017aaa154
Max
245
135
30
10
10
3
3
Unit
K/W
K/W
K/W
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