PMV22EN NXP Semiconductors, PMV22EN Datasheet - Page 5
![MOSFET, N CH, 30V, 5.2A, SOT23](/photos/41/52/415233/sot023_3d_sml.gif)
PMV22EN
Manufacturer Part Number
PMV22EN
Description
MOSFET, N CH, 30V, 5.2A, SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.PMV22EN.pdf
(14 pages)
Specifications of PMV22EN
Rohs Compliant
YES
Transistor Polarity
N Channel
Continuous Drain Current Id
5.2A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.017ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1.5V
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PMV22EN
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
6. Characteristics
Table 6.
PMV22EN
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
g
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
DSS
GSS
d(on)
r
d(off)
f
fs
(BR)DSS
GSth
SD
DSon
iss
oss
rss
G(tot)
GS
GD
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
transconductance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
forward
Conditions
I
I
V
V
V
V
V
t
V
t
V
t
V
δ ≤ 0.01; T
I
T
V
T
V
T
I
All information provided in this document is subject to legal disclaimers.
D
D
p
p
p
D
S
j
j
j
DS
DS
GS
GS
GS
GS
GS
DS
GS
DS
≤ 300 µs; δ ≤ 0.01; T
≤ 300 µs; δ ≤ 0.01; T
≤ 300 µs; δ ≤ 0.01; T
= 25 °C
= 25 °C
= 25 °C; I
= 0.93 A; V
= 250 µA; V
= 250 µA; V
= 3 A; V
= 30 V; V
= 30 V; V
= 5 V; I
= 15 V; V
= 20 V; V
= -20 V; V
= 10 V; I
= 10 V; I
= 4.5 V; I
= 0 V; V
Rev. 1 — 30 March 2011
DS
j
D
= 25 °C
D
DS
D
D
= 3 A; pulsed; t
D
= 15 V; V
GS
GS
GS
GS
= 3 A
DS
GS
DS
DS
= 5.2 A; pulsed;
= 5.2 A; pulsed;
= 4.5 A; pulsed;
= 15 V; f = 1 MHz;
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= 10 V; R
= V
= 0 V; T
= 0 V; T
GS
j
j
j
GS
; T
= 25 °C
= 150 °C
= 25 °C
j
amb
amb
j
j
j
= 25 °C
= 25 °C
j
= 10 V;
G(ext)
= 25 °C
= 25 °C
= 25 °C
p
= 25 °C
= 150 °C
≤ 300 µs;
= 6 Ω;
30 V, 5.2 A N-channel Trench MOSFET
Min
30
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
1.5
-
-
-
-
17
27
22
12
8.6
1.2
1.3
480
110
52
4
15
100
40
0.72
PMV22EN
© NXP B.V. 2011. All rights reserved.
-
Max
-
2.5
1
10
100
100
22
34
29
-
13
-
-
-
-
-
-
-
-
1.2
Unit
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
S
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
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