PMV22EN NXP Semiconductors, PMV22EN Datasheet - Page 8

• Manufacturer Part Number: PMV22EN
• Description: MOSFET, N CH, 30V, 5.2A, SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMV22EN

• Rohs Compliant: YES
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5.2A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.017ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.5V

NXP Semiconductors
PMV22EN
Product data sheet
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source current as a function of source-drain voltage; typical values
V
(V)
GS
10
8
6
4
2
0
charge; typical values
I
V
(1) T
(2) T
0
D
GS
= 3 A; V
= 0 V
j
j
= 150 °C
= 25 °C
DS
= 15 V; T
3
amb
= 25 °C
(A)
6
I
S
4
3
2
1
0
0.0
Q
All information provided in this document is subject to legal disclaimers.
G
017aaa163
(nC)
9
Rev. 1 — 30 March 2011
0.4
(1)
Fig 15. Gate charge waveform definitions
0.8
(2)
V
V
SD
V
V
V
GS(pl)
017aaa164
DS
GS(th)
GS
(V)
30 V, 5.2 A N-channel Trench MOSFET
1.2
Q
GS1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
PMV22EN
© NXP B.V. 2011. All rights reserved.
017aaa137
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