MT29F1G08ABBDAH4-IT:D Micron Technology Inc, MT29F1G08ABBDAH4-IT:D Datasheet - Page 20

• Manufacturer Part Number: MT29F1G08ABBDAH4-IT:D
• Manufacturer: Micron Technology Inc

Specifications of MT29F1G08ABBDAH4-IT:D

• Cell Type: NAND
• Density: 8Gb
• Interface Type: Parallel
• Address Bus: 27b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 1.95V
• Word Size: 8b
• Number Of Words: 128M
• Supply Current: 20mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / Rohs Status: Supplier Unconfirmed

Asynchronous Addresses
Figure 12: Asynchronous Address Latch Cycle
PDF: 09005aef83e5ffed
m68a.pdf – Rev. D 06/10 EN
WE#
ALE
I/Ox
CLE
CE#
An asynchronous address is written from I/O[7:0] to the address register on the rising
edge of WE# when CE# is LOW, ALE is HIGH, CLE is LOW, and RE# is HIGH.
Bits that are not part of the address space must be LOW (see Device and Array Organiza-
tion). The number of cycles required for each command varies. Refer to the command
descriptions to determine addressing requirements.
Addresses are input on I/O[7:0] on x8 devices and on I/O[15:0] on x16 devices.
t CS
t CLS
t WP
t ALS
t DS
add 1
Col
t WC
t DH
t ALH
t WH
add 2
Col
20
Asynchronous Interface Bus Operation
add 1
Row
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1Gb x8, x16: NAND Flash Memory
add 2
Row
Don’t Care
© 2010 Micron Technology, Inc. All rights reserved.
add 3
Row
Undefined