MT29F1G08ABBDAH4-IT:D Micron Technology Inc, MT29F1G08ABBDAH4-IT:D Datasheet - Page 60

• Manufacturer Part Number: MT29F1G08ABBDAH4-IT:D
• Manufacturer: Micron Technology Inc

Specifications of MT29F1G08ABBDAH4-IT:D

• Cell Type: NAND
• Density: 8Gb
• Interface Type: Parallel
• Address Bus: 27b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 1.95V
• Word Size: 8b
• Number Of Words: 128M
• Supply Current: 20mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / Rohs Status: Supplier Unconfirmed

Internal Data Move Operations
READ FOR INTERNAL DATA MOVE (00h-35h)
PDF: 09005aef83e5ffed
m68a.pdf – Rev. D 06/10 EN
Internal data move operations make it possible to transfer data within a device from
one page to another using the cache register. This is particularly useful for block man-
agement and wear leveling.
The INTERNAL DATA MOVE operation is a two-step process consisting of a READ FOR
INTERNAL DATA MOVE (00h-35h) and a PROGRAM FOR INTERNAL DATA MOVE
(85h-10h) command. To move data from one page to another, first issue the READ FOR
INTERNAL DATA MOVE (00h-35h) command. When the die (LUN) is ready (RDY = 1,
ARDY = 1), the host can transfer the data to a new page by issuing the PROGRAM FOR
INTERNAL DATA MOVE (85h-10h) command. When the die (LUN) is again ready (RDY
= 1, ARDY = 1), the host should check the FAIL bit to verify that this operation comple-
ted successfully.
To prevent bit errors from accumulating over multiple INTERNAL DATA MOVE opera-
tions, it is recommended that the host read the data out of the cache register after the
READ FOR INTERNAL DATA MOVE (00h-35h) completes and prior to issuing the PRO-
GRAM FOR INTERNAL DATA MOVE (85h-10h) command. The RANDOM DATA READ
(05h-E0h) command can be used to change the column address. The host should check
the data for ECC errors and correct them. When the PROGRAM FOR INTERNAL DATA
MOVE (85h-10h) command is issued, any corrected data can be input. The PROGRAM
FOR INTERNAL DATA INPUT (85h) command can be used to change the column address.
Between the READ FOR INTERNAL DATA MOVE (00h-35h) and PROGRAM FOR INTER-
NAL DATA MOVE (85h-10h) commands, the following commands are supported: status
operation (70h) and column address operations (05h-E0h, 85h). The RESET operation
(FFh) can be issued after READ FOR INTERNAL DATA MOVE (00h-35h), but the con-
tents of the cache registers on the target are not valid.
The READ FOR INTERNAL DATA MOVE (00h-35h) command is functionally identical
to the READ PAGE (00h-30h) command, except that 35h is written to the command reg-
ister instead of 30h.
Though it is not required, it is recommended that the host read the data out of the de-
vice to verify the data prior to issuing the PROGRAM FOR INTERNAL DATA MOVE
(85h-10h) command to prevent the propagation of data errors.
If internal ECC is enabled, the data does not need to be toggled out by the host to be
corrected and moving data can then be written to a new page without data reloading,
which improves system performance.
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
1Gb x8, x16: NAND Flash Memory
Internal Data Move Operations
© 2010 Micron Technology, Inc. All rights reserved.