PSMN3R2-25YLC,115 NXP Semiconductors, PSMN3R2-25YLC,115 Datasheet - Page 2

• Manufacturer Part Number: PSMN3R2-25YLC,115
• Description: MOSFET Power N-Ch 25V 3.4 mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN3R2-25YLC,115

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.4 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 79 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Gate Charge Qg: 30 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.4 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 1.95V @ 1mA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 1781pF @ 12V
• Power - Max: 79W
• Mounting Type: Surface Mount
• Lead Free Status / Rohs Status: Details
• Other names: 934065203115

NXP Semiconductors
[1]
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Marking
Table 4.
[1]
PSMN3R2-25YLC
Product data sheet
Pin
1
2
3
4
mb
Type number
PSMN3R2-25YLC
Type number
PSMN3R2-25YLC
Continuous current is limited by package
% = placeholder for manufacturing site code
Symbol Description
S
S
S
G
D
Pinning information
Ordering information
Marking codes
source
source
source
gate
mounting base; connected to drain
LFPAK; Power-SO8
Package
Name
N-channel 25 V 3.4 mΩ logic level MOSFET in LFPAK using NextPower
All information provided in this document is subject to legal disclaimers.
Description
plastic single-ended surface-mounted package; 4 leads
Rev. 01 — 2 May 2011
Simplified outline
SOT669 (LFPAK; Power-SO8)
Marking code
3C225L
1 2 3 4
mb
[1]
PSMN3R2-25YLC
Graphic symbol
mbb076
G
© NXP B.V. 2011. All rights reserved.
D
S
Version
SOT669
2 of 15