BUK7L11-34ARC NXP Semiconductors, BUK7L11-34ARC Datasheet

MOSFET Power TRENCHPLUS MOSFET

BUK7L11-34ARC

Manufacturer Part Number
BUK7L11-34ARC
Description
MOSFET Power TRENCHPLUS MOSFET
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUK7L11-34ARC

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0097 Ohms
Drain-source Breakdown Voltage
34 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
89 A
Power Dissipation
172 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
 Details
Other names
BUK7L11-34ARC,127
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include internal gate resistors and
TrenchPLUS diodes for clamping and ElectroStatic Discharge (ESD) protection. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
Table 1.
[1]
[2]
Symbol Parameter
I
P
Static characteristics
R
D
tot
DSon
Low conduction losses due to low
on-state resistance
Q101 compliant
12 V loads
Automotive systems
Current is limited by power dissipation chip rating.
Refer to document 9397 750 12572 for further information.
BUK7L11-34ARC
N-channel TrenchPLUS standard level FET
Rev. 05 — 17 February 2009
drain current
total power
dissipation
drain-source
on-state resistance
Quick reference
Conditions
V
see
T
V
T
see
mb
j
GS
GS
= 25 °C; see
Figure
Figure 6
= 25 °C; see
= 10 V; T
= 10 V; I
1; see
D
mb
= 30 A;
Figure
= 25 °C;
Figure 2
Figure 3
14;
Reduced component count due to
integrated gate resistor
General purpose power switching
Motors, lamps and solenoids
[1]
[2]
Min
-
-
-
Product data sheet
Typ
-
-
8
Max
89
172
11
Unit
A
W
mΩ

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BUK7L11-34ARC Summary of contents

Page 1

... BUK7L11-34ARC N-channel TrenchPLUS standard level FET Rev. 05 — 17 February 2009 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. The devices include internal gate resistors and TrenchPLUS diodes for clamping and ElectroStatic Discharge (ESD) protection. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications ...

Page 2

... Ordering information Table 3. Ordering information Type number Package Name Description BUK7L11-34ARC TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-leads BUK7L11-34ARC_5 Product data sheet BUK7L11-34ARC N-channel TrenchPLUS standard level FET Simplified outline SOT78C (TO-220AB) Rev. 05 — 17 February 2009 Graphic symbol mbl521 ...

Page 3

... ° °C; see Figure ms; δ = 0.01 pulsed continuous °C mb ≤ 10 µs; pulsed ° ≤ unclamped °C j(init) HBM 250 pF 1.5 kΩ HBM 100 pF 1.5 kΩ Rev. 05 — 17 February 2009 BUK7L11-34ARC Min Max [ [ - [2][ [ Figure 3 - 358 - 172 - -55 175 -55 175 ...

Page 4

... N-channel TrenchPLUS standard level FET 03nj52 120 P der (%) 150 200 0 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature DC 10 (1) Capped due to package Rev. 05 — 17 February 2009 BUK7L11-34ARC 03na19 50 100 150 200 T (°C) mb 03nj50 = 10 μ 100 μ 100 (V) DS © ...

Page 5

... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7L11-34ARC_5 Product data sheet N-channel TrenchPLUS standard level FET Conditions vertical in free air see Figure Rev. 05 — 17 February 2009 BUK7L11-34ARC Min Typ Max - 0.55 0.87 03nj51 t p δ ...

Page 6

... see Figure 14; see Figure 175 ° see Figure 14; see Figure ° MHz ° °C; see Figure MHz °C; see Figure 17 j Rev. 05 — 17 February 2009 BUK7L11-34ARC Min Typ Max Unit 2.2 3 3 0.1 2 µ µ 250 µ ...

Page 7

... °C j measured from drain lead 6 mm from package to centre of die °C j measured from source lead to source bond pad ° ° see Figure /dt = -100 A/µ ° Rev. 05 — 17 February 2009 BUK7L11-34ARC Min Typ Max Unit - 127 - ns - 118 - ...

Page 8

... Drain-source on-state resistance as a function of gate-source voltage; typical values 03nh87 42.0 V DSR(CL) (V) 41.5 max 41.0 40 (V) GS Fig 8. Drain-source clamping voltage as a function of drain current; typical values Rev. 05 — 17 February 2009 BUK7L11-34ARC N-channel TrenchPLUS standard level FET 03nj46 (V) GS 03nj57 = 175 ° ° -55 ° ...

Page 9

... Fig 10. Forward transconductance as a function of drain current; typical values 03nj45 43 V DSR(CL) ( ° (V) GS Fig 12. Drain-source clamping voltage as a function of gate-source clamping current; typical values Rev. 05 — 17 February 2009 BUK7L11-34ARC N-channel TrenchPLUS standard level FET 03nj44 (A) D 03nj56 = 175 ° ° -55 ° ...

Page 10

... ° 0.8 1.0 1.2 V (V) SD Fig 16. Gate-source voltage as a function of gate charge; typical values Rev. 05 — 17 February 2009 BUK7L11-34ARC N-channel TrenchPLUS standard level FET 03aa27 0 60 120 ( ° 03nj43 (nC) G © NXP B.V. 2009. All rights reserved. ...

Page 11

... DS Fig 18. Source-gate clamping current as a function of source-gate clamping voltage; typical values 1.03 a 1.02 1.01 1 0.99 0.98 -100 - 100 Rev. 05 — 17 February 2009 BUK7L11-34ARC N-channel TrenchPLUS standard level FET 003aab215 (BR)GSS 003aab216 150 200 T (°C) j © NXP B.V. 2009. All rights reserved. ...

Page 12

... 0.44 15.07 6.47 10.40 2.64 5.16 6.03 0.33 14.80 6.22 10.00 2.44 5.00 5.76 REFERENCES JEDEC JEITA 3-lead TO-220 Rev. 05 — 17 February 2009 BUK7L11-34ARC N-channel TrenchPLUS standard level FET base 14.00 6.10 3.90 2.72 2.95 3.80 13.50 5.58 3.78 2.40 2.69 3 ...

Page 13

... N-channel TrenchPLUS standard level FET Data sheet status Change notice Product data sheet - Product data sheet - Product data sheet - Product data sheet - Product data sheet - Rev. 05 — 17 February 2009 BUK7L11-34ARC Supersedes BUK7L11-34ARC_4 BUK7L11_34ARC-03 BUK7L11_34ARC-02 BUK7L11_34ARC-01 - © NXP B.V. 2009. All rights reserved ...

Page 14

... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 05 — 17 February 2009 BUK7L11-34ARC © NXP B.V. 2009. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: Rev. 05 — 17 February 2009 Document identifier: BUK7L11-34ARC_5 All rights reserved. ...

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