BUK7L11-34ARC NXP Semiconductors, BUK7L11-34ARC Datasheet - Page 4

• Manufacturer Part Number: BUK7L11-34ARC
• Description: MOSFET Power TRENCHPLUS MOSFET
• Manufacturer: NXP Semiconductors

Specifications of BUK7L11-34ARC

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0097 Ohms
• Drain-source Breakdown Voltage: 34 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 89 A
• Power Dissipation: 172 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK7L11-34ARC,127

NXP Semiconductors
BUK7L11-34ARC_5
Product data sheet
Fig 1.
Fig 3.
(A)
10
10
I
100
(A)
D
I
10
D
80
60
40
20
3
2
1
0
function of mounting base temperature
Normalized continuous drain current as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
1
0
(1) Capped at 75 A due to package
Limit R
(1)
50
DSon
(1)
= V
DS
/ I
100
D
150
T
mb
(1) Capped at 75 A due to package
03nj52
(°C)
Rev. 05 — 17 February 2009
200
DC
10
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
N-channel TrenchPLUS standard level FET
50
BUK7L11-34ARC
V
DS
(V)
100
t
100 μ s
1 ms
10 ms
100 ms
p
= 10 μ s
150
© NXP B.V. 2009. All rights reserved.
T
mb
03nj50
03na19
(°C)
10
200
2
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