BUK7L11-34ARC NXP Semiconductors, BUK7L11-34ARC Datasheet - Page 11

MOSFET Power TRENCHPLUS MOSFET

BUK7L11-34ARC

Manufacturer Part Number
BUK7L11-34ARC
Description
MOSFET Power TRENCHPLUS MOSFET
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUK7L11-34ARC

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0097 Ohms
Drain-source Breakdown Voltage
34 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
89 A
Power Dissipation
172 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
 Details
Other names
BUK7L11-34ARC,127
NXP Semiconductors
BUK7L11-34ARC_5
Product data sheet
Fig 17. Input, output and reverse transfer capacitances
Fig 19. Normalized source-gate clamping voltage as a function of junction temperature; typical values
(pF)
4000
3000
2000
1000
C
0
10
as a function of drain-source voltage; typical
values
-1
1
C
C
C
oss
rss
iss
10
1.03
1.02
1.01
0.99
0.98
a
1
-100
V
DS
03nj49
(V)
-50
Rev. 05 — 17 February 2009
10
2
0
50
Fig 18. Source-gate clamping current as a function of
100
(A)
10
I
10
10
10
10
G
-1
-2
-3
-4
-5
source-gate clamping voltage; typical values
20
N-channel TrenchPLUS standard level FET
150
003aab216
T
j
(°C)
22
200
BUK7L11-34ARC
24
26
28
© NXP B.V. 2009. All rights reserved.
V
003aab215
30
(BR)GSS
(V)
32
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