BUK7L11-34ARC NXP Semiconductors, BUK7L11-34ARC Datasheet - Page 7

• Manufacturer Part Number: BUK7L11-34ARC
• Description: MOSFET Power TRENCHPLUS MOSFET
• Manufacturer: NXP Semiconductors

Specifications of BUK7L11-34ARC

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0097 Ohms
• Drain-source Breakdown Voltage: 34 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 89 A
• Power Dissipation: 172 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK7L11-34ARC,127

NXP Semiconductors
Table 6.
BUK7L11-34ARC_5
Product data sheet
Symbol
t
t
t
t
L
L
Source-drain diode
V
t
Q
d(on)
r
d(off)
f
rr
D
S
SD
r
Characteristics
Parameter
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
source-drain voltage
reverse recovery time
recovered charge
…continued
Conditions
V
R
measured from contact screw on mounting
base to centre of die; T
measured from drain lead 6 mm from
package to centre of die; T
measured from source lead to source
bond pad; T
I
see
I
V
S
S
DS
G(ext)
DS
= 25 A; V
= 20 A; dI
Figure 15
= 30 V; R
= 30 V; T
= 10 Ω; T
Rev. 05 — 17 February 2009
GS
j
S
= 25 °C
/dt = -100 A/µs; V
j
L
= 25 °C
= 0 V; T
= 1.2 Ω; V
j
= 25 °C
j
j
= 25 °C;
= 25 °C
GS
j
= 25 °C
= 10 V;
GS
= 0 V;
N-channel TrenchPLUS standard level FET
BUK7L11-34ARC
Min
-
-
-
-
-
-
-
-
-
-
Typ
20
92
127
118
3.5
4.5
7.5
0.85
52
28
© NXP B.V. 2009. All rights reserved.
Max
-
-
-
-
-
-
-
1.2
-
-
Unit
ns
ns
ns
ns
nH
nH
nH
V
ns
nC
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