BUK7515-100A NXP Semiconductors, BUK7515-100A Datasheet - Page 3

• Manufacturer Part Number: BUK7515-100A
• Description: MOSFET Power RAIL PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7515-100A

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.15 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK7515-100A,127

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BUK7515-100A
Product data sheet
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalance ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
DS
DGR
GS
tot
DS(AL)S
P
(%)
der
100
80
60
40
20
0
function of mounting base temperature
Normalized total power dissipation as a
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
50
100
150
All information provided in this document is subject to legal disclaimers.
T
mb
003aaf382
(°C)
200
Conditions
T
R
T
T
T
T
T
pulsed; T
I
V
D
j
mb
mb
mb
mb
mb
Rev. 3 — 21 April 2011
GS
GS
≥ 25 °C; T
= 35 A; V
= 25 °C
= 100 °C
= 25 °C; pulsed
= 25 °C
= 25 °C
= 10 V; T
= 20 kΩ
mb
sup
= 25 °C
j
Fig 2.
≤ 175 °C
j(init)
≤ 25 V; R
(%)
= 25 °C; unclamped
I
D
100
80
60
40
20
0
function of mounting base temperature
V
Normalized continuous drain current as a
0
GS
N-channel TrenchMOS standard level FET
GS
≥ 10 V
= 50 Ω;
50
BUK7515-100A
100
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
150
© NXP B.V. 2011. All rights reserved.
T
mb
003aaf383
175
175
Max
100
100
20
75
60.8
240
300
75
240
120
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
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