BUK7515-100A NXP Semiconductors, BUK7515-100A Datasheet - Page 8
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BUK7515-100A
Manufacturer Part Number
BUK7515-100A
Description
MOSFET Power RAIL PWR-MOS
Manufacturer
NXP Semiconductors
Datasheet
1.BUK7515-100A.pdf
(13 pages)
Specifications of BUK7515-100A
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.15 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
75 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
Details
Other names
BUK7515-100A,127
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BUK7515-100A
Manufacturer:
PHI
Quantity:
11 550
Company:
Part Number:
BUK7515-100A
Manufacturer:
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Quantity:
51 000
Company:
Part Number:
BUK7515-100A
Manufacturer:
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Quantity:
12 500
NXP Semiconductors
BUK7515-100A
Product data sheet
Fig 14. Input, output and reverse transfer capacitances
Fig 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
(nF)
C
12
8
4
0
10
as a function of drain-source voltage; typical
values
V
V
−2
GS
GS
C
C
C
oss
rss
= 0 V; f = 1 MHz
= 0 V
iss
10
−1
1
(A)
I
D
100
80
60
40
20
10
0
0
All information provided in this document is subject to legal disclaimers.
V
003aaf394
DS
(V)
10
Rev. 3 — 21 April 2011
2
T
j
0.4
= 175 °C
Fig 15. Gate-source voltage as a function of gate
V
0.8
(V)
GS
12
T
8
4
0
j
V
charge; typical values
T
= 25 °C
0
SDS
j
N-channel TrenchMOS standard level FET
= 25 °C; I
003aaf396
(V)
1.2
V
D
DS
40
= 25 A
= 14 V
BUK7515-100A
80
V
DS
Q
© NXP B.V. 2011. All rights reserved.
G
= 80 V
003aaf395
(nC)
120
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