BUK7515-100A NXP Semiconductors, BUK7515-100A Datasheet - Page 6

• Manufacturer Part Number: BUK7515-100A
• Description: MOSFET Power RAIL PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7515-100A

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.15 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK7515-100A,127

NXP Semiconductors
BUK7515-100A
Product data sheet
Fig 6.
Fig 8.
R
(mΩ)
DS(on)
(A)
I
D
300
200
100
16
14
12
10
0
function of drain-source voltage; typical values
of gate-sorce voltage; typical values
T
Output characteristics: drain current as a
T
Drain-source on-state resistance as a function
5
0
j
j
= 25 °C
= 25 °C; I
V
GS
(V) = 20
2
D
10
= 25 A
4
10
9
6
15
8
V
All information provided in this document is subject to legal disclaimers.
GS
8
4.5
003aaf388
003aaf386
V
(V)
DS
7.5
6.5
5.5
(V)
7
6
5
20
10
Rev. 3 — 21 April 2011
Fig 7.
Fig 9.
R
(mΩ)
DS(on)
(A)
I
D
100
19
17
15
13
80
60
40
20
11
0
of drain current; typical values
function of gate-source voltage; typical values
T
Drain-source on-state resistance as a function
V
Transfer characteristics: drain current as a
0
0
j
DS
N-channel TrenchMOS standard level FET
= 25 °C
> I
D
20
x R
2
DSon
T
j
40
= 175 °C
BUK7515-100A
4
V
GS
60
(V) = 10
T
j
= 25 °C
6
© NXP B.V. 2011. All rights reserved.
80
V
5.5
6.5
003aaf387
003aaf389
GS
6
7
8
I
D
(A)
(V)
100
8
6 of 13