BUK9518-55A NXP Semiconductors, BUK9518-55A Datasheet - Page 9

• Manufacturer Part Number: BUK9518-55A
• Description: MOSFET Power RAIL MOSFET
• Manufacturer: NXP Semiconductors

Specifications of BUK9518-55A

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 61 A
• Power Dissipation: 136 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK9518-55A,127

NXP Semiconductors
BUK9518-55A
Product data sheet
Fig 13. Gate-source voltage as a function of turn-on
V
(V)
GS
5
4
3
2
1
0
gate charge; typical values
0
5
V
DD
10
= 14 V
15
20
V
25
DD
= 44 V
All information provided in this document is subject to legal disclaimers.
30
Q
03ne41
G
(nC)
Rev. 02 — 17 February 2011
35
Fig 14. Reverse diode current as a function of reverse
(A)
I
S
100
80
60
40
20
0
diode voltage; typical values
0
0.2
N-channel TrenchMOS logic level FET
T
j
= 175 °C
0.4
BUK9518-55A
0.6
0.8
T
j
© NXP B.V. 2011. All rights reserved.
= 25 °C
1.0
V
03ne40
SD
(V)
1.2
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