BUK9518-55A NXP Semiconductors, BUK9518-55A Datasheet - Page 3
![MOSFET Power RAIL MOSFET](/photos/16/4/160465/to3_sml.jpg)
BUK9518-55A
Manufacturer Part Number
BUK9518-55A
Description
MOSFET Power RAIL MOSFET
Manufacturer
NXP Semiconductors
Datasheet
1.BUK9518-55A.pdf
(14 pages)
Specifications of BUK9518-55A
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.016 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
61 A
Power Dissipation
136 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
Details
Other names
BUK9518-55A,127
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BUK9518-55A
Manufacturer:
PHI
Quantity:
11 550
Company:
Part Number:
BUK9518-55A
Manufacturer:
NXP
Quantity:
30 000
Company:
Part Number:
BUK9518-55A
Manufacturer:
NXP
Quantity:
12 500
NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BUK9518-55A
Product data sheet
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
DS
DGR
GS
tot
DS(AL)S
(A)
I
D
80
60
40
20
0
function of mounting base temperature
25
Normalized continuous drain current as a
Limiting values
50
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
75
100
125
150
All information provided in this document is subject to legal disclaimers.
175
T
mb
03nf37
Rev. 02 — 17 February 2011
(°C)
200
Conditions
T
R
T
see
T
T
see
T
T
pulsed; t
I
V
D
j
mb
mb
mb
mb
mb
GS
GS
≥ 25 °C; T
= 61 A; V
Figure 3
Figure 3
= 25 °C; V
= 100 °C; V
= 25 °C; pulsed; t
= 25 °C; see
= 25 °C
= 20 kΩ
= 5 V; T
Fig 2.
p
≤ 10 µs; T
sup
P
(%)
j(init)
j
der
≤ 175 °C
120
GS
80
40
≤ 55 V; R
0
GS
= 25 °C; unclamped
function of mounting base temperature
Normalized total power dissipation as a
0
Figure 2
= 5 V; see
= 5 V; see
mb
p
= 25 °C
≤ 10 µs;
N-channel TrenchMOS logic level FET
GS
50
= 50 Ω;
Figure
Figure 1
1;
BUK9518-55A
100
Min
-
-
-15
-
-
-
-
-55
-55
-
-
-
150
© NXP B.V. 2011. All rights reserved.
T
mb
175
175
Max
55
55
15
61
43
246
136
61
246
127
03na19
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
3 of 14