ISL9N315AD3ST Fairchild Semiconductor, ISL9N315AD3ST Datasheet
ISL9N315AD3ST
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ISL9N315AD3ST Summary of contents
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... ISL9N315AD3 / ISL9N315AD3ST N-Channel Logic Level PWM Optimized UltraFET General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies ...
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... 15V 10A 4.5V 10V 15V 10A 10V 2 23A 12A 23A, dI /dt = 100A 23A, dI /dt = 100A Min Typ Max 150 250 - - 100 0.012 0.015 - 0.022 0.028 - 900 - - 210 - - 9 15V DD = 23A - 1.0 1 1.0mA - 3 3 120 180 - - - - 1. 1 ISL9N315AD3/ISL9N315AD3ST Rev.A1 Units ...
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... C) Figure 2. Maximum Continuous Drain Current RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) Figure 4. Peak Current Capability V = 10V 4. 100 125 150 175 CASE TEMPERATURE ( C) C Case Temperature NOTES: DUTY FACTOR PEAK FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - ISL9N315AD3/ISL9N315AD3ST Rev. ...
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... 3.0V GS PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 0.5 1.0 1.5 2 DRAIN TO SOURCE VOLTAGE (V) DS PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX V = 10V - 120 160 JUNCTION TEMPERATURE ( 250 120 160 JUNCTION TEMPERATURE ( C) J ISL9N315AD3/ISL9N315AD3ST Rev.A1 2.5 = 30A 200 200 ...
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... Figure 12. Gate Charge Waveforms for Constant 140 120 t f 100 80 t d(OFF d(ON Figure 14. Switching Time vs Gate Resistance DUT 0.01 Figure 16. Unclamped Energy Waveforms = 15V WAVEFORMS IN DESCENDING ORDER 30A 15A GATE CHARGE (nC) g Gate Currents = 10V 15V d(OFF d(ON GATE TO SOURCE RESISTANCE ( ) GS BV DSS ISL9N315AD3/ISL9N315AD3ST Rev. ...
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... Figure 17. Gate Charge Test Circuit Figure 19. Switching Time Test Circuit ©2003 Fairchild Semiconductor Corporation (Continued DUT g(REF) 0 Figure 18. Gate Charge Waveforms d(ON 90 DUT V GS 50% 10% 0 Figure 20. Switching Time Waveforms Q g(TOT g( g(TH OFF t d(OFF 10% 10% 90% 50% PULSE WIDTH ISL9N315AD3/ISL9N315AD3ST Rev.A1 = 10V 90% ...
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... 0.268 + Area ©2003 Fairchild Semiconductor Corporation , and the 125 application’s ambient 100 never exceeded (EQ 0. Figure 21. Thermal Resistance vs Mounting dissipation. Pulse values listed in the (EQ 33.32 + 23.84/(0.268+Area AREA, TOP COPPER AREA (in ) Pad Area ISL9N315AD3/ISL9N315AD3ST Rev.A1 10 ...
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... Fairchild Semiconductor Corporation DPLCAP 5 10 RSLC1 51 + RSLC2 5 ESLC RDRAIN 6 ESG 8 EVTHRES + EVTEMP 8 RGATE MMED MSTRO CIN 8 S1A S2A S1B S2B EGS EDS LDRAIN DRAIN 2 RLDRAIN DBREAK DBODY EBREAK 18 - MWEAK LSOURCE SOURCE 7 3 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT + 8 22 RVTHRES ISL9N315AD3/ISL9N315AD3ST Rev.A1 ...
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... DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + + 19 LGATE EVTEMP 8 RGATE GATE RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 51 ISCL DBREAK 50 RDRAIN 11 DBODY MWEAK EBREAK MMED + MSTRO 17 18 LSOURCE - 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES ISL9N315AD3/ISL9N315AD3ST Rev.A1 DRAIN 2 SOURCE 3 ...
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... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE ISL9N315AD3/ISL9N315AD3ST Rev.A1 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet Series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...