ISL9N315AD3ST Fairchild Semiconductor, ISL9N315AD3ST Datasheet - Page 3

• Manufacturer Part Number: ISL9N315AD3ST
• Description: MOSFET Power N-Ch LL UltraFET PWM Optimized
• Manufacturer: Fairchild Semiconductor

Specifications of ISL9N315AD3ST

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.028 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 30 A
• Power Dissipation: 55 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252AA
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

©2003 Fairchild Semiconductor Corporation
Typical Characteristic
Figure 1. Normalized Power Dissipation vs
1.2
1.0
0.8
0.6
0.4
0.2
0
0.01
100
500
0.1
0
20
2
1
10
10
-5
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
-5
25
V
GS
V
GS
Ambient Temperature
= 10V
= 5V
T
50
C
, CASE TEMPERATURE (
Figure 3. Normalized Maximum Transient Thermal Impedance
10
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
75
10
SINGLE PULSE
-4
-4
100
Figure 4. Peak Current Capability
125
o
C)
10
10
-3
-3
t , RECTANGULAR PULSE DURATION (s)
150
175
t , PULSE WIDTH (s)
Figure 2. Maximum Continuous Drain Current vs
10
10
-2
-2
40
30
20
10
0
25
50
Case Temperature
10
10
T
-1
-1
C
NOTES:
DUTY FACTOR: D = t
PEAK T
, CASE TEMPERATURE (
75
J
= P
V
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
T
100
GS
C
I = I
DM
= 25
= 10V
x Z
25
V
GS
o
10
ISL9N315AD3/ISL9N315AD3ST Rev.A1
10
C
P
JC
= 4.5V
DM
1
o
0
0
125
/t
C DERATE PEAK
x R
2
175 - T
o
C)
150
JC
t
1
+ T
t
C
2
150
C
10
10
175
1
1