ISL9N315AD3ST Fairchild Semiconductor, ISL9N315AD3ST Datasheet - Page 2

• Manufacturer Part Number: ISL9N315AD3ST
• Description: MOSFET Power N-Ch LL UltraFET PWM Optimized
• Manufacturer: Fairchild Semiconductor

Specifications of ISL9N315AD3ST

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.028 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 30 A
• Power Dissipation: 55 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252AA
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

©2003 Fairchild Semiconductor Corporation
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Switching Characteristics
Unclamped Inductive Switching
Drain-Source Diode Characteristics
B
I
I
V
r
C
C
C
Q
Q
Q
Q
Q
t
t
t
t
t
t
t
t
t
t
t
t
t
V
t
Q
DSS
GSS
DS(ON)
ON
d(ON)
r
d(OFF)
f
OFF
ON
d(ON)
r
d(OFF)
f
OFF
AV
rr
GS(TH)
VDSS
ISS
OSS
RSS
SD
g(TOT)
g(5)
g(TH)
gs
gd
RR
Symbol
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Drain to Source On Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Avalanche Time
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
Parameter
(V
(V
GS
GS
= 4.5V)
= 10V)
T
A
= 25°C unless otherwise noted
I
V
V
V
V
I
I
V
f = 1MHz
V
V
V
V
V
V
V
I
I
I
I
I
D
D
D
D
SD
SD
SD
SD
DD
GS
DD
GS
DS
GS
GS
GS
DS
GS
GS
GS
= 250 A, V
= 30A, V
= 23A, V
= 2.7 A, 3.0 mH
= 23A
= 12A
= 23A, dI
= 23A, dI
= 25V
= 0V
= 20V
= V
= 15V, V
= 0V to 10V
= 0V to 5V
= 0V to 1V
= 15V, I
= 4.5V, R
= 15V, I
= 10V, R
Test Conditions
DS
, I
GS
GS
D
D
D
SD
SD
GS
GS
GS
= 10A
GS
= 10A
= 250 A
= 10V
= 4.5V
/dt = 100A/ s
/dt = 100A/ s
T
= 0V,
= 18
= 0V
= 18
V
I
I
C
D
g
DD
= 150
= 1.0mA
= 23A
= 15V
o
C
Min
30
180
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
0.012
0.022
900
210
9.6
1.0
3.4
3.4
-
-
-
-
90
18
11
49
27
28
26
52
28
6
-
-
-
-
-
-
-
-
-
-
ISL9N315AD3/ISL9N315AD3ST Rev.A1
0.015
0.028
Max
250
100
1.25
120
1.5
1.0
28
14
1
90
83
48
29
18
-
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Units
nA
nC
nC
nC
nC
nC
pF
pF
pF
nC
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
A
s