ISL9N315AD3ST Fairchild Semiconductor, ISL9N315AD3ST Datasheet - Page 5

• Manufacturer Part Number: ISL9N315AD3ST
• Description: MOSFET Power N-Ch LL UltraFET PWM Optimized
• Manufacturer: Fairchild Semiconductor

Specifications of ISL9N315AD3ST

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.028 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 30 A
• Power Dissipation: 55 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252AA
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

©2003 Fairchild Semiconductor Corporation
Typical Characteristic
Test Circuits and Waveforms
Figure 13. Switching Time vs Gate Resistance
VARY t
REQUIRED PEAK I
0V
100
2000
1000
Figure 11. Capacitance vs Drain to Source
Figure 15. Unclamped Energy Test Circuit
80
60
40
20
100
70
0
P
0.1
0
TO OBTAIN
V
GS
C
V
C
t
GS
OSS
P
= 4.5V, V
RSS
V
GS
= C
R
= 0V, f = 1MHz
AS
10
C
GS
V
GS
GD
DS
DD
, GATE TO SOURCE RESISTANCE ( )
+ C
, DRAIN TO SOURCE VOLTAGE (V)
= 15V, I
GD
Voltage
20
R
1
D
G
= 9A
(Continued)
30
C
ISS
V
I
AS
DS
t
= C
d(ON)
DUT
0.01
GS
40
L
10
+ C
GD
t
t
d(OFF)
r
-
+
t
V
f
DD
30
50
Figure 12. Gate Charge Waveforms for Constant
Figure 14. Switching Time vs Gate Resistance
0
140
120
100
10
Figure 16. Unclamped Energy Waveforms
80
60
40
20
8
6
4
2
0
0
0
0
V
V
GS
DD
= 10V, V
= 15V
R
10
3
GS
DD
, GATE TO SOURCE RESISTANCE ( )
I
AS
Gate Currents
= 15V, I
Q
g
t
, GATE CHARGE (nC)
P
D
20
6
= 9A
BV
t
AV
DSS
WAVEFORMS IN
DESCENDING ORDER:
ISL9N315AD3/ISL9N315AD3ST Rev.A1
30
9
I
I
D
D
t
= 30A
= 15A
d(OFF)
t
d(ON)
V
t
f
DS
12
40
V
t
DD
r
15
50