FDMS4435BZ Fairchild Semiconductor, FDMS4435BZ Datasheet

MOSFET Power P-Channel PowerTrench MOSFET

FDMS4435BZ

Manufacturer Part Number
FDMS4435BZ
Description
MOSFET Power P-Channel PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDMS4435BZ

Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
20 mOhms
Forward Transconductance Gfs (max / Min)
25 S
Drain-source Breakdown Voltage
- 30 V
Continuous Drain Current
- 9 A
Power Dissipation
39 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
Power 56
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMS4435BZ
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2011 Fairchild Semiconductor Corporation
FDMS4435BZ Rev.C3
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDMS4435BZ
P-Channel PowerTrench
-30 V, -18 A, 20 mΩ
Features
V
V
I
E
P
T
R
R
D
J
DS
GS
AS
D
θJC
θJA
, T
Max r
Max r
Extended V
High performance trench technology for extremely low r
High power and current handling capability
HBM ESD protection level >7 kV typical (Note 4)
100% UIL tested
Termination is Lead-free and RoHS Compliant
Symbol
Device Marking
STG
FDMS4435BZ
DS(on)
DS(on)
GSS
= 20 mΩ at V
= 37 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Top
range (-25 V) for battery applications
GS
GS
Power 56
FDMS4435BZ
= -10 V, I
= -4.5 V, I
-Continuous
-Continuous (Silicon limited)
-Pulsed
Device
D
D
D
= -9.0 A
= -6.5 A
D
T
®
A
D
= 25 °C unless otherwise noted
MOSFET
D
Parameter
Bottom
DS(on)
Power 56
Package
S
S
1
S
T
T
T
T
T
Pin 1
A
G
C
C
C
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load
switching applications common in Notebook Computers and
Portable Battery Packs.
Applications
A
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
High side in DC-DC Buck Converters
Notebook battery power management
Load switch in Notebook
Reel Size
13 ’’
D
D
D
D
(Note 1a)
(Note 1a)
(Note 1a)
(Note 3)
8
7
5
6
Tape Width
12 mm
-55 to +150
Ratings
±25
-9.0
-30
-18
-35
-50
2.5
3.2
18
39
50
®
process that has
March 2011
www.fairchildsemi.com
3000 units
3
4
1
2
Quantity
G
S
S
S
Units
°C/W
mJ
°C
W
V
V
A

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FDMS4435BZ Summary of contents

Page 1

... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDMS4435BZ FDMS4435BZ ©2011 Fairchild Semiconductor Corporation FDMS4435BZ Rev.C3 ® MOSFET General Description = -9.0 A This P-Channel MOSFET is produced using Fairchild D Semiconductor’s advanced Power Trench = -6 been especially tailored to minimize the on-state resistance. This ...

Page 2

... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ° based on starting mH The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2011 Fairchild Semiconductor Corporation FDMS4435BZ Rev. °C unless otherwise noted J Test Conditions = -250 μ -250 μ ...

Page 3

... JUNCTION TEMPERATURE ( , T J Figure 3. Normalized On- Resistance vs Junction Temperature 50 μ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 125 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDMS4435BZ Rev. °C unless otherwise noted μ 100 125 150 0. - 0.001 4 -3 ...

Page 4

... TIME IN AVALANCHE (ms) AV Figure 9. Unclamped Inductive Switching Capability - 125 - GATE TO SOURCE VOLTAGE (V) GS Figure 11. Gate Leakage Current vs Gate to Source Voltage ©2011 Fairchild Semiconductor Corporation FDMS4435BZ Rev. °C unless otherwise noted J 5000 1000 100 100 100 0.1 0. iss C oss C rss MHz 0 DRAIN TO SOURCE VOLTAGE (V) DS Figure 8 ...

Page 5

... Figure 13. Single Pulse Maximum Power Dissipation 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 0.001 - Figure 14. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDMS4435BZ Rev. °C unless otherwise noted PULSE WIDTH (sec) SINGLE PULSE 125 C/W θ ...

Page 6

... Dimensional Outline and Pad Layout ©2011 Fairchild Semiconductor Corporation FDMS4435BZ Rev.C3 6 www.fairchildsemi.com ...

Page 7

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2011 Fairchild Semiconductor Corporation FDMS4435BZ Rev.C3 ® PowerTrench ® PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ...

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