FDMS4435BZ Fairchild Semiconductor, FDMS4435BZ Datasheet - Page 2

• Manufacturer Part Number: FDMS4435BZ
• Description: MOSFET Power P-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMS4435BZ

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 20 mOhms
• Forward Transconductance Gfs (max / Min): 25 S
• Drain-source Breakdown Voltage: - 30 V
• Continuous Drain Current: - 9 A
• Power Dissipation: 39 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 56
• Lead Free Status / Rohs Status: Details

©2011 Fairchild Semiconductor Corporation
FDMS4435BZ Rev.C3
Notes:
1. R
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. E
4. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
ΔV
d(on)
r
d(off)
f
rr
DS(on)
FS
the user's board design.
GS(th)
iss
oss
rss
g
SD
ΔT
ΔT
g
g
gs
gd
rr
Symbol
AS
θJA
DSS
GS(th)
DSS
J
J
of 18 mJ is based on starting T
is determined with the device mounted on a 1 in
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
J
= 25
Parameter
°
C, L = 1 mH, I
2
a)
T
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
50 °C/W when mounted on a
1 in
= 25 °C unless otherwise noted
AS
2
= -6 A, V
pad of 2 oz copper
DD
= -27 V, V
V
V
I
I
I
V
V
V
I
V
V
V
V
V
f = 1 MHz
V
V
V
V
F
D
D
D
T
GS
GS
DS
GS
GS
GS
GS
GS
DS
DS
DD
GS
GS
GS
J
= -9.0 A, di/dt = 100 A/μs
= -250 μA, V
= -250 μA, referenced to 25 °C
= -250 μA, referenced to 25 °C
= 125 °C
= 0 V, I
= 0 V, I
= -24 V, V
= ±25 V, V
= V
= -10 V, I
= -4.5 V, I
= -10 V, I
= -5 V, I
= -15 V, V
= -15 V, I
= -10 V, R
= 0 V to -10 V
= 0 V to -4.5 V
GS
= -10 V. 100% tested at L = 0.3 mH, I
DS
2
Test Conditions
, I
S
S
D
D
= -1.9 A
= -9.0 A
D
D
D
D
= -9.0 A
= -250 μA
GS
GS
GEN
GS
DS
= -9.0 A
= -9.0 A
= -9.0 A,
= -6.5 A
= 0 V
= 0 V,
= 0 V
= 0 V
= 6 Ω
V
I
D
DD
= -9.0 A
= -15 V,
(Note 2)
(Note 2)
θJC
is guaranteed by design while R
AS
= -8 A.
Min
-1.0
b) 125 °C/W when mounted
-30
on a minimum pad of 2 oz copper.
1540
0.75
0.86
290
260
Typ
-1.9
25
12
-23
10
35
19
34
18
15
22
21
25
5
9
5
9
6
2050
Max
390
385
θCA
±10
-3.0
1.2
1.5
17
18
56
33
47
25
39
21
20
37
28
-1
www.fairchildsemi.com
is determined by
mV/°C
mV/°C
Units
mΩ
nC
nC
nC
nC
nC
μA
μA
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
S
V