FDMS4435BZ Fairchild Semiconductor, FDMS4435BZ Datasheet - Page 4

• Manufacturer Part Number: FDMS4435BZ
• Description: MOSFET Power P-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMS4435BZ

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 20 mOhms
• Forward Transconductance Gfs (max / Min): 25 S
• Drain-source Breakdown Voltage: - 30 V
• Continuous Drain Current: - 9 A
• Power Dissipation: 39 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 56
• Lead Free Status / Rohs Status: Details

©2011 Fairchild Semiconductor Corporation
FDMS4435BZ Rev.C3
Typical Characteristics
10
Figure 11.
10
10
10
10
10
10
10
10
10
10
20
10
-10
8
6
4
2
0
1
0.01
-1
-2
-3
-4
-5
-6
-7
-8
-9
Figure 7.
0
0
I
D
Figure 9.
V
= -9 A
3
GS
= 0 V
Gate Leakage Current vs Gate to
6
8
V
Switching Capability
t
DD
-V
Gate Charge Characteristics
AV
GS
9
Source Voltage
= -15 V
, TIME IN AVALANCHE (ms)
T
Q
Unclamped Inductive
J
, GATE TO SOURCE VOLTAGE (V)
g
0.1
= 125
, GATE CHARGE (nC)
T
12 15 18 21 24 27 30 33
J
V
= 125
16
DD
o
= -10 V
C
V
o
DD
C
= -20 V
T
J
T
24
T
= 25
J
= 25
J
= 25 °C unless otherwise noted
1
o
C
o
C
T
J
= 100
32
o
C
40
10
4
5000
1000
0.01
100
100
0.1
40
32
24
16
10
8
0
Figure 10.
1
0.05 0.1
0.1
25
Package Limited
R
THIS AREA IS
LIMITED BY r
SINGLE PULSE
T J = MAX RATED
R
T A = 25 o C
f = 1 MHz
V
Figure 8.
θ
θ
GS
JC
JA = 125
Figure 12. Forward Bias Safe
Current vs Cate Temperature
= 0 V
= 3.2
-V
-V
DS
50
DS
Maximum Continuous Drain
o
, DRAIN to SOURCE VOLTAGE (V)
o C/W
to Source Voltage
T
C/W
, DRAIN TO SOURCE VOLTAGE (V)
C
Operating Area
DS(on)
,
Capacitance vs Drain
CASE TEMPERATURE (
75
1
1
V
GS
= -4.5 V
100
V
GS
= -10 V
10
C
C
C
o
iss
oss
rss
C )
125
10
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10 s
100
1 ms
10 ms
DC
100 ms
1 s
μ
s
150
100
30