FDMS4435BZ Fairchild Semiconductor, FDMS4435BZ Datasheet - Page 3

• Manufacturer Part Number: FDMS4435BZ
• Description: MOSFET Power P-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMS4435BZ

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 20 mOhms
• Forward Transconductance Gfs (max / Min): 25 S
• Drain-source Breakdown Voltage: - 30 V
• Continuous Drain Current: - 9 A
• Power Dissipation: 39 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 56
• Lead Free Status / Rohs Status: Details

©2011 Fairchild Semiconductor Corporation
FDMS4435BZ Rev.C3
Typical Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
50
40
30
20
10
50
40
30
20
10
0
0
-75
0
Figure 3. Normalized On- Resistance
1
Figure 1.
I
V
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
D
V
GS
DS
= - 9 A
-50
= -10 V
= -5 V
-V
vs Junction Temperature
DS
-V
T
-25
, DRAIN TO SOURCE VOLTAGE (V)
J
GS
,
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
1
JUNCTION TEMPERATURE (
2
On-Region Characteristics
, GATE TO SOURCE VOLTAGE (V)
T
J
0
= 25
V
GS
V
T
GS
J
25
o
= -4.5 V
C
= 125
μ
= -6 V
s
2
3
V
GS
50
o
C
= -10 V
T
T
J
J
= -55
μ
75
= 25 °C unless otherwise noted
s
o
3
o
C
4
100 125 150
C )
V
V
GS
GS
= -3.5 V
= -4 V
4
5
3
0.001
0.01
0.1
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
50
10
80
60
40
20
1
0
0.0
Figure 2.
Figure 4.
0
2
Forward Voltage vs Source Current
vs Drain Current and Gate Voltage
Figure 6.
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
GS
GS
= -3.5 V
-V
= 0 V
0.2
SD
T
J
10
-V
, BODY DIODE FORWARD VOLTAGE (V)
= 125
Normalized On-Resistance
GS
On-Resistance vs Gate to
-
I
4
D
Source Voltage
0.4
,
Source to Drain Diode
,
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
T
o
J
C
I
D
= 25
= -9 A
20
V
0.6
o
GS
C
μ
T
s
J
= -4 V
= 125
6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
0.8
T
30
o
T
J
C
J
= -55
= 25
1.0
V
o
o
GS
C
8
C
40
V
= -4.5 V
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V
GS
GS
1.2
= -10 V
= -6 V
μ
s
1.4
50
10