FDMS4435BZ Fairchild Semiconductor, FDMS4435BZ Datasheet - Page 5

• Manufacturer Part Number: FDMS4435BZ
• Description: MOSFET Power P-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMS4435BZ

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 20 mOhms
• Forward Transconductance Gfs (max / Min): 25 S
• Drain-source Breakdown Voltage: - 30 V
• Continuous Drain Current: - 9 A
• Power Dissipation: 39 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 56
• Lead Free Status / Rohs Status: Details

©2011 Fairchild Semiconductor Corporation
FDMS4435BZ Rev.C3
Typical Characteristics
0.001
0.01
1000
0.1
100
0.5
2
1
10
10
1
10
-4
-4
DUTY CYCLE-DESCENDING ORDER
SINGLE PULSE
R
T
D = 0.5
A
θ
JA
= 25
0.2
0.1
0.05
0.02
0.01
= 125
o
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
C
o
C/W
10
10
-3
-3
Figure 13. Single Pulse Maximum Power Dissipation
T
J
= 25 °C unless otherwise noted
10
10
-2
-2
SINGLE PULSE
R
θ
JA
= 125
t, RECTANGULAR PULSE DURATION (sec)
t, PULSE WIDTH (sec)
o
C/W
10
10
-1
-1
5
1
1
NOTES:
DUTY FACTOR: D = t
PEAK T
10
10
J
= P
DM
x Z
P
θJA
DM
1
/t
x R
2
100
100
θJA
t
1
+ T
t
2
A
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1000
1000