NTTFS4930NTWG ON Semiconductor, NTTFS4930NTWG Datasheet

NTTFS4930NTWG

Manufacturer Part Number

NTTFS4930NTWG

Description

MOSFET N-CH 30V 23A 8WDFN

Manufacturer

ON Semiconductor

Series

-r

Datasheet

1.NTTFS4930NTWG.pdf (7 pages)

Specifications of NTTFS4930NTWG

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

23 mOhm @ 6A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

4.5A

Vgs(th) (max) @ Id

2.2V @ 250µA

Gate Charge (qg) @ Vgs

5.5nC @ 4.5V

Input Capacitance (ciss) @ Vds

476pF @ 15V

Power - Max

790mW

Mounting Type

Package / Case

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

30 mOhms

Forward Transconductance Gfs (max / Min)

19 S

Drain-source Breakdown Voltage

30 V

Continuous Drain Current

7.2 A

Power Dissipation

2.06 W

Mounting Style

SMD/SMT

Fall Time

3.6 ns

Gate Charge Qg

5.5 nC

Rise Time

26.6 ns

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

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NTTFS4930N

Power MOSFET

30 V, 23 A, Single N−Channel, m8FL

Features

•

Applications

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

April, 2011 − Rev. 0

MAXIMUM RATINGS

Drain−to−Source Voltage

Gate−to−Source Voltage

Continuous Drain

Current R

Power Dissipation R

(Note 1)

Continuous Drain

Current R

(Note 1)

Power Dissipation

Continuous Drain

Current R

Power Dissipation

Continuous Drain

Current R

Power Dissipation

Pulsed Drain Current

Operating Junction and Storage Temperature

Source Current (Body Diode)

Drain to Source dV/dt

Single Pulse Drain−to−Source Avalanche Energy

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

Compliant

Low R

Low Capacitance to Minimize Driver Losses

Optimized Gate Charge to Minimize Switching Losses

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

DC−DC Converters

Power Load Switch

Notebook Battery Management

Motor Control

qJA

qJC

= 12 A

= 25°C, V

≤ 10 s (Note 1)

(Note 2)

(Note 1)

DS(on)

qJA

qJC

, L = 0.1 mH, R

(Note 1)

≤ 10 s

(Note 2)

(Note 1)

to Minimize Conduction Losses

= 50 V, V

Parameter

qJA

Steady

= 25 W)

State

= 25°C unless otherwise stated)

= 10 V,

= 25°C, t

= 10 ms

= 25°C

= 85°C

= 25°C

= 85°C

= 25°C

= 85°C

= 25°C

= 85°C

= 25°C

Symbol

dV/dt

DSS

stg

−55 to

Value

+150

2.06

3.61

0.79

20.2

±20

260

7.2

5.2

9.6

6.9

4.5

3.2

6.0

7.2

V/ns

Unit

°C

†For information on tape and reel specifications,

NTTFS4930NTAG

NTTFS4930NTWG

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

CASE 511AB

(BR)DSS

30 V

(Note: Microdot may be in either location)

Device

WDFN8

(m8FL)

ORDERING INFORMATION

4930

G (4)

http://onsemi.com

N−Channel MOSFET

30 mW @ 4.5 V

23 mW @ 10 V

= Specific Device Code

= Assembly Location

= Year

= Work Week

= Pb−Free Package

D (5−8)

DS(on)

(Pb−Free)

Package

WDFN8

MARKING DIAGRAM

Publication Order Number:

MAX

S (1,2,3)

AYWWG

1500/Tape & Reel

5000/Tape & Reel

4930

NTTFS4930N/D

Shipping

23 A

MAX

†

Related parts for NTTFS4930NTWG

NTTFS4930NTWG Summary of contents

Page 1

... P 20 Device T , −55 to °C J NTTFS4930NTAG T +150 stg NTTFS4930NTWG dV/dt 6.0 V/ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification T 260 °C Brochure, BRD8011/ http://onsemi.com R MAX I MAX DS(on) ...

Page 2

THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Case (Drain) Junction−to−Ambient – Steady State (Note 3) Junction−to−Ambient – Steady State (Note 4) Junction−to−Ambient – (t ≤ (Note 3) 3. Surface−mounted on FR4 board using 1 sq−in pad Cu. 4. ...

Page 3

ELECTRICAL CHARACTERISTICS (T Parameter SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge PACKAGE PARASITIC VALUES Source Inductance Drain ...

Page 4

V 6.5 V 4 0.5 1 1 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.0340 0.0300 0.0260 0.0220 0.0180 0.0140 0.0100 3.0 3.8E−02 ...

Page 5

1.5 GS 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 −50 − JUNCTION TEMPERATURE (°C) J Figure 5. On−Resistance Variation with Temperature ...

Page 6

V < V < Single Pulse 100 T = 25° 0.1 R Limit DS(on) Thermal Limit Package Limit 0.01 0 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 11. Maximum Rated Forward ...

Page 7

... M 0.57 0.75 0.47 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81− ...

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