NTTFS4930NTWG ON Semiconductor, NTTFS4930NTWG Datasheet - Page 5

• Manufacturer Part Number: NTTFS4930NTWG
• Description: MOSFET N-CH 30V 23A 8WDFN
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NTTFS4930NTWG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 23 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 5.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 476pF @ 15V
• Power - Max: 790mW
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 30 mOhms
• Forward Transconductance Gfs (max / Min): 19 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 7.2 A
• Power Dissipation: 2.06 W
• Mounting Style: SMD/SMT
• Fall Time: 3.6 ns
• Gate Charge Qg: 5.5 nC
• Rise Time: 26.6 ns
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

1000
800
600
200
100
400
1.7
1.6
1.5
1.4
1.3
1.2
1.1
0.9
0.8
0.7
0.6
10
1
0
1
0
−50
0
1
V
V
I
D
Figure 9. Resistive Switching Time Variation
GS
DD
I
V
D
= 15 A
GS
−25
Figure 5. On−Resistance Variation with
C
= 10 A
C
= 10 V
= 15 V
C
rss
V
oss
= 10 V
iss
DS
5
Figure 7. Capacitance Variation
T
J
, DRAIN−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
0
R
G
vs. Gate Resistance
, GATE RESISTANCE (W)
10
25
Temperature
50
10
15
75
20
t
TYPICAL CHARACTERISTICS
d(off)
100
T
V
J
GS
= 25°C
= 0 V
25
http://onsemi.com
125
t
t
t
d(on)
f
r
150
100
30
5
1.0E−04
1.0E−05
1.0E−06
1.0E−07
1.0E−08
1.0E−09
1.0E−10
1.0E−11
11
10
30
25
20
15
10
9
8
7
6
5
4
3
2
1
0
5
0
0.1
10
0
Figure 10. Diode Forward Voltage vs. Current
V
V
T
Q
Figure 6. Drain−to−Source Leakage Current
GS
J
GS
Drain−to−Source Voltage vs. Total Charge
gs
0.2
= 25°C
= 0 V
= 0 V
V
V
DS
SD
0.3
Figure 8. Gate−to−Source and
2
, DRAIN−TO−SOURCE VOLTAGE (V)
, SOURCE−TO−DRAIN VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
15
Q
0.4
gd
0.5
vs. Voltage
4
Q
0.6
20
T
0.7
6
0.8
T
T
T
J
J
25
J
V
V
I
= 150°C
= 125°C
D
= 25°C
T
GS
DD
0.9
J
= 20 A
8
= 25°C
= 10 V
= 15 V
1.0
1.1
30
10