NTTFS4930NTWG ON Semiconductor, NTTFS4930NTWG Datasheet - Page 3

• Manufacturer Part Number: NTTFS4930NTWG
• Description: MOSFET N-CH 30V 23A 8WDFN
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NTTFS4930NTWG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 23 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 5.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 476pF @ 15V
• Power - Max: 790mW
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 30 mOhms
• Forward Transconductance Gfs (max / Min): 19 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 7.2 A
• Power Dissipation: 2.06 W
• Mounting Style: SMD/SMT
• Fall Time: 3.6 ns
• Gate Charge Qg: 5.5 nC
• Rise Time: 26.6 ns
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 6)
DRAIN−SOURCE DIODE CHARACTERISTICS
PACKAGE PARASITIC VALUES
5. Pulse Test: pulse width = 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Source Inductance
Drain Inductance
Gate Inductance
Gate Resistance
Parameter
(T
Symbol
J
t
t
Q
V
d(on)
d(off)
t
R
L
L
L
= 25°C unless otherwise specified)
RR
t
t
t
t
SD
RR
a
b
D
G
r
f
S
G
http://onsemi.com
V
GS
V
V
I
GS
GS
S
I
D
= 0 V, d
= 20 A
= 15 A, R
Test Condition
= 10 V, V
= 0 V,
3
T
I
S
A
= 20 A
= 25°C
IS
/d
G
DS
t
= 100 A/ms,
= 3.0 W
= 15 V,
T
T
J
J
= 125°C
= 25°C
Min
0.054
17.6
13.3
0.97
0.89
15.3
0.38
Typ
4.6
2.5
7.4
7.9
4.6
1.3
0.6
Max
1.2
Unit
nC
nH
ns
ns
W
V