NTTFS4930NTWG ON Semiconductor, NTTFS4930NTWG Datasheet - Page 4

• Manufacturer Part Number: NTTFS4930NTWG
• Description: MOSFET N-CH 30V 23A 8WDFN
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NTTFS4930NTWG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 23 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 5.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 476pF @ 15V
• Power - Max: 790mW
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 30 mOhms
• Forward Transconductance Gfs (max / Min): 19 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 7.2 A
• Power Dissipation: 2.06 W
• Mounting Style: SMD/SMT
• Fall Time: 3.6 ns
• Gate Charge Qg: 5.5 nC
• Rise Time: 26.6 ns
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

50
40
30
20
10
0
0
8.5 V
10 V
0.5
Figure 1. On−Region Characteristics
V
DS
1
, DRAIN−TO−SOURCE VOLTAGE (V)
6.5 V
1.5
2
3.8E−02
3.4E−02
3.0E−02
2.6E−02
2.2E−02
1.8E−02
1.4E−02
1.0E−02
0.0340
0.0300
0.0260
0.0220
0.0180
0.0140
0.0100
2.5
3.0
5
3
Figure 4. On−Resistance vs. Drain Current and
4.4 V
T = 25°C
3.5
4.0
TYPICAL CHARACTERISTICS
Figure 3. On−Resistance vs. V
10
V
4
T
GS
J
4.5 V
4.2 V
3.8 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
= 25°C
5.0
4 V
I
= 2.6 V
D
4.5
, DRAIN CURRENT (A)
http://onsemi.com
Gate Voltage
15
V
V
6.0
5
GS
GS
V
GS
= 4.5 V
= 10 V
4
(V)
7.0
20
40
30
20
10
0
1
8.0
V
DS
1.5
GS
= 10 V
T
25
T
I
V
D
J
Figure 2. Transfer Characteristics
J
GS
= 25°C
= 10 A
9.0
= 25°C
, GATE−TO−SOURCE VOLTAGE (V)
2
T
10.0
J
30
= 125°C
2.5
T
3
J
= −55°C
3.5
4
4.5
5