NTTFS4930NTWG ON Semiconductor, NTTFS4930NTWG Datasheet - Page 6

• Manufacturer Part Number: NTTFS4930NTWG
• Description: MOSFET N-CH 30V 23A 8WDFN
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NTTFS4930NTWG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 23 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 5.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 476pF @ 15V
• Power - Max: 790mW
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 30 mOhms
• Forward Transconductance Gfs (max / Min): 19 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 7.2 A
• Power Dissipation: 2.06 W
• Mounting Style: SMD/SMT
• Fall Time: 3.6 ns
• Gate Charge Qg: 5.5 nC
• Rise Time: 26.6 ns
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

1000
0.01
100
0.1
10
0.01
100
1
0.1
10
0.000001
0.1
1
R
Thermal Limit
Package Limit
0 V < V
Single Pulse
T
Figure 11. Maximum Rated Forward Biased
DS(on)
C
= 25°C
V
DS
Limit
D = 0.5
GS
0.2
0.05
, DRAIN−TO−SOURCE VOLTAGE (V)
0.02
0.01
0.1
0.00001
< 20 V
SINGLE PULSE
Safe Operating Area
1
0.0001
10
0.001
TYPICAL CHARACTERISTICS
Figure 13. Thermal Response
10 ms
100 ms
1 ms
10 ms
dc
http://onsemi.com
0.01
100
t, TIME (s)
6
10
9
8
7
6
5
4
3
2
1
0
0.1
25
Figure 12. Maximum Avalanche Energy vs.
T
J
, STARTING JUNCTION TEMPERATURE (°C)
Starting Junction Temperature
50
1
75
10
100
100
I
125
D
= 12 A
1000
150