PSMN8R0-30YL,115 NXP Semiconductors, PSMN8R0-30YL,115 Datasheet - Page 4

• Manufacturer Part Number: PSMN8R0-30YL,115
• Description: MOSFET Power N-Ch 30V TrenchMOS logic level FET
• Manufacturer: NXP Semiconductors

Specifications of PSMN8R0-30YL,115

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8.3 mOhms
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 62 A
• Power Dissipation: 56 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Fall Time: 8 ns
• Gate Charge Qg: 9 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 29 ns
• Lead Free Status / Rohs Status: Details
• Other names: 934064947115

NXP Semiconductors
PSMN8R0-30YLC
Product data sheet
Fig 3.
Fig 4.
(A)
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10
D
10
10
10
-1
3
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1
10
Single pulse avalanche rating; avalanche current as a function of avalanche time
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
-1
N-channel 30 V 7.9 mΩ logic level MOSFET in LFPAK using NextPower technology
Limit R
(A)
I
AL
10
10
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1
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DS on
All information provided in this document is subject to legal disclaimers.
-3
1
= V
DS
Rev. 2 — 1 September 2011
/ I
10
D
-2
DC
10
-1
(1)
(2)
1
t
AL
003aag151
(ms)
10
10
PSMN8R0-30YLC
V
DS
(V)
t
100  s
1 ms
10 ms
100 ms
p
=10  s
© NXP B.V. 2011. All rights reserved.
003a a g152
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