PSMN8R0-30YL,115 NXP Semiconductors, PSMN8R0-30YL,115 Datasheet - Page 8

• Manufacturer Part Number: PSMN8R0-30YL,115
• Description: MOSFET Power N-Ch 30V TrenchMOS logic level FET
• Manufacturer: NXP Semiconductors

Specifications of PSMN8R0-30YL,115

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8.3 mOhms
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 62 A
• Power Dissipation: 56 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Fall Time: 8 ns
• Gate Charge Qg: 9 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 29 ns
• Lead Free Status / Rohs Status: Details
• Other names: 934064947115

NXP Semiconductors
PSMN8R0-30YLC
Product data sheet
Fig 8.
Fig 10. Sub-threshold drain current as a function of
(A)
I
(S )
g
10
D
10
10
10
10
10
fs
80
60
40
20
-1
-2
-3
-4
-5
-6
0
drain current; typical values
gate-source voltage
Forward transconductance as a function of
0
0
20
Min
1
N-channel 30 V 7.9 mΩ logic level MOSFET in LFPAK using NextPower technology
40
Typ
Max
2
60
V
All information provided in this document is subject to legal disclaimers.
GS
003a a g156
003a a g158
I
D
(V)
(A)
Rev. 2 — 1 September 2011
80
3
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
(A)
GS (th)
I
(V)
D
80
60
40
20
0
3
2
1
0
-60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics; drain current as a
0
Max (1mA)
Min (5mA)
0
1
T
PSMN8R0-30YLC
j
= 150 C
I
D
=5mA
60
2
1mA
T
j
= 25 C
120
3
© NXP B.V. 2011. All rights reserved.
V
003a a g157
003a a g159
T
GS
j
(C)
(V)
180
4
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