PSMN8R0-30YL,115 NXP Semiconductors, PSMN8R0-30YL,115 Datasheet - Page 5
![MOSFET Power N-Ch 30V TrenchMOS logic level FET](/photos/40/31/403123/lfpak_sml.jpg)
PSMN8R0-30YL,115
Manufacturer Part Number
PSMN8R0-30YL,115
Description
MOSFET Power N-Ch 30V TrenchMOS logic level FET
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN8R0-30YLC115.pdf
(15 pages)
Specifications of PSMN8R0-30YL,115
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
8.3 mOhms
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
62 A
Power Dissipation
56 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
LFPAK
Fall Time
8 ns
Gate Charge Qg
9 nC
Minimum Operating Temperature
- 55 C
Rise Time
29 ns
Lead Free Status / Rohs Status
Details
Other names
934064947115
NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN8R0-30YLC
Product data sheet
Symbol
R
Fig 5.
th(j-mb)
Z
(K/W)
th(j-mb)
10
10
10
-1
-2
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-6
= 0.5
0.2
0.05
0.02
0.1
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
s ingle s hot
N-channel 30 V 7.9 mΩ logic level MOSFET in LFPAK using NextPower technology
10
-5
All information provided in this document is subject to legal disclaimers.
10
-4
Rev. 2 — 1 September 2011
Conditions
see
Figure 5
10
-3
10
-2
PSMN8R0-30YLC
Min
-
10
P
-1
t
p
Typ
3.38
T
© NXP B.V. 2011. All rights reserved.
t
003a a g153
p
=
(s )
Max
3.61
t
T
p
t
1
Unit
K/W
5 of 15