BUK9506-55B NXP Semiconductors, BUK9506-55B Datasheet - Page 2

• Manufacturer Part Number: BUK9506-55B
• Description: MOSFET Power HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9506-55B

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0054 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 146 A
• Power Dissipation: 258 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 106 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 95 ns
• Lead Free Status / Rohs Status: Details
• Other names: BUK9506-55B,127

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BUK9506-55B_4
Product data sheet
Pin
1
2
3
mb
Type number
BUK9506-55B
Symbol
G
D
S
D
Pinning information
Ordering information
Package
Name
TO-220AB
Description
gate
drain
source
mounting base; connected to
drain
Table 1.
[1]
Symbol Parameter
Static characteristics
R
DSon
Continuous current is limited by package.
drain-source
on-state resistance
Description
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
Quick reference
Rev. 04 — 23 July 2009
…continued
Conditions
V
T
and
V
T
and
j
j
GS
GS
= 25 °C; see
= 25 °C; see
Simplified outline
12
12
= 10 V; I
= 5 V; I
D
(TO-220AB)
D
= 25 A;
= 25 A;
SOT78
Figure 11
Figure 11
1 2
mb
3
BUK9506-55B
N-channel TrenchMOS FET
Graphic symbol
Min
-
-
Typ
4.8
5.1
G
mbb076
© NXP B.V. 2009. All rights reserved.
Max
5.4
6
D
Version
SOT78
S
Unit
mΩ
mΩ
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